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Investigation of Cr0.06(Sb4Te)0.94 alloy for high-speed and high-data-retention phase change random access memory applications

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Abstract

The effects of Cr doping on the structural and electrical properties of Cr x (Sb4Te)1−x materials have been investigated in order to solve the contradiction between thermal stability and fast crystallization speed of Sb4Te alloys. Cr0.06(Sb4Te)0.94 alloy is considered to be a potential candidate for phase change random access memory (PCM), as evidenced by a higher crystallization temperature (204 °C), a better data retention ability (137.6 °C for 10 years), a lower melting point (558 °C), a lower energy consumption, and a faster switching speed in comparison with those of Ge2Sb2Te5. A reversible switching between set and reset states can be realized by an electric pulse as short as 5 ns for Cr0.06(Sb4Te)0.94-based PCM cell. In addition, Cr0.06(Sb4Te)0.94 shows good endurance up to 1.1 × 104 cycles with a resistance ratio of about two orders of magnitude.

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Acknowledgments

This work was supported by the “Strategic Priority Research Program” of the Chinese Academy of Sciences (XDA09020402), National Key Basic Research Program of China (2013CBA01900, 2011CBA00607, 2011CB932804), National Integrate Circuit Research Program of China (2009ZX02023-003), National Natural Science Foundation of China (61261160500, 61376006, 51201178), and Science and Technology Council of Shanghai (13DZ2295700, 13ZR1447200, 14ZR1447500, 14DZ2294900).

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Authors and Affiliations

  1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, China

    Le Li, Sannian Song, Zhonghua Zhang, Zhitang Song, Yan Cheng, Shilong Lv, Liangcai Wu, Bo Liu & Songlin Feng

  2. Graduate School of the Chinese Academy of Sciences, Beijing, 100049, China

    Le Li

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  1. Le Li
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  2. Sannian Song
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  3. Zhonghua Zhang
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  9. Songlin Feng
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Correspondence to Le Li.

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Li, L., Song, S., Zhang, Z. et al. Investigation of Cr0.06(Sb4Te)0.94 alloy for high-speed and high-data-retention phase change random access memory applications. Appl. Phys. A 120, 537–542 (2015). https://doi.org/10.1007/s00339-015-9211-3

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  • DOI: https://doi.org/10.1007/s00339-015-9211-3

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