Optical and electrical properties of In_1−x Mn _x Se thin films

Abstract

Ternary systems of In_1−x Mn _x Se were synthesized by the direct fusion technique. Thin films of these compounds were prepared by thermal evaporation under a vacuum of 10⁻⁵ Torr. Structural properties of these compounds in thin film forms were investigated by X-ray diffraction and revealed that the as-deposited films have amorphous nature. The optical absorption spectra of In_1−x Mn _x Se films were studied in the wavelength region of 250–2500 nm. The optical properties show that the direct band gap (E _g) values vary from 1.52 to 1.66 eV with increasing Mn content. The electrical conductivity, σ, of In_1−x Mn _x Se semiconducting thin films increases with increasing temperature in the range of 300–488 K and decreases with increasing Mn content. For the activation energy, it was found that it decreases with increasing Mn content.