Skip to main content
SpringerLink
Log in

Tuning charge transport in pentacene thin-film transistors using the strain-induced electron–phonon coupling modification

  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

Tuning charge transport in the bottom-contact pentacene-based organic thin-film transistors (OTFTs) using a MoO x capping layer that serves to the electron–phonon coupling modification is reported. For OTFTs with a MoO x front gate, the enhanced field-effect carrier mobility is investigated. The time domain data confirm the electron-trapping model. To understand the origin of a mobility enhancement, an analysis of the temperature-dependent Hall-effect characteristics is presented. Similarly, the Hall-effect carrier mobility was dramatically increased by capping a MoO x layer on the pentacene front surface. However, the carrier concentration is not affected. The Hall-effect carrier mobility exhibits strong temperature dependence, indicating the dominance of tunneling (hopping) at low (high) temperatures. A mobility enhancement is considered to come from the electron–phonon coupling modification that results from the contribution of long-lifetime electron trapping.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4

Similar content being viewed by others

References

  1. H. Klauk, Organic Electronics (Wiley-VCH, Weinheim, 2006)

    Book  Google Scholar 

  2. V. Coropceanu, J. Cornil, D.A. da Silva Fiho, Y. Olivier, R. Silbey, J. Brédas, Chem. Rev. 107, 926 (2007)

    Article  Google Scholar 

  3. E.A. Silinsh, Organic Molecular Crystals (Springer, Berlin, 1980)

    Book  Google Scholar 

  4. M. Pope, C.E. Swenberg, Electronic Processes in Organic Crystals and Polymers, 2nd edn. (Oxford University Press, New York, 1999)

    Google Scholar 

  5. B.C. Huang, Y.J. Lin, Appl. Phys. Lett. 99, 113301 (2011)

    Article  ADS  Google Scholar 

  6. Y.J. Lin, C.L. Tsai, B.C. Huang, Appl. Phys. Lett. 97, 203509 (2010)

    Article  ADS  Google Scholar 

  7. Y.J. Lin, C.L. Tsai, Y.C. Su, D.S. Liu, Appl. Phys. Lett. 100, 253302 (2012)

    Article  ADS  Google Scholar 

  8. Y.J. Lin, H.Y. Tsao, D.S. Liu, Appl. Phys. Lett. 101, 013302 (2012)

    Article  ADS  Google Scholar 

  9. Y.J. Lin, J.J. Zeng, C.L. Tsai, Appl. Phys. Lett. 101, 053305 (2012)

    Article  ADS  Google Scholar 

  10. H.Y. Tsao, Y.J. Lin, Appl. Phys. Lett. 101, 113306 (2012)

    Article  ADS  Google Scholar 

  11. E. Hendry, F. Wang, J. Shan, T.F. Heinz, M. Bonn, Phys. Rev. B 69, 081101 (2004)

    Article  ADS  Google Scholar 

  12. J. Li, H.P. Lin, F. Zhou, W.Q. Zhu, X.Y. Jiang, Z.L. Zhang, Curr. Appl. Phys. 12, 280 (2012)

    Article  ADS  Google Scholar 

  13. D. Kumaki, T. Umeda, S. Tokito, Appl. Phys. Lett. 92, 013301 (2008)

    Article  ADS  Google Scholar 

  14. Y. Hong, F. Yan, P. Migliorato, S.H. Han, J. Jang, Thin Solid Films 515, 4032 (2007)

    Article  ADS  Google Scholar 

  15. I. Kymissis, C. Dimitrakopoulos, S. Purushothaman, IEEE Trans. Electron Devices 48, 1060 (2001)

    Article  ADS  Google Scholar 

  16. L. Bürgi, T.J. Richards, R.H. Friend, H. Sirringhaus, J. Appl. Phys. 94, 6129 (2003)

    Article  ADS  Google Scholar 

  17. P.V. Necliudov, M.S. Shur, D.J. Gundlach, T.N. Jackson, J. Appl. Phys. 88, 6594 (2000)

    Article  ADS  Google Scholar 

  18. L. Smith, V. Moroz, G. Eneman, P. Verheyen, F. Nouri, L. Washington, M. Jurczak, O. Penzin, D. Pramanik, K.D. Meyer, IEEE Electron Device Lett. 26, 652 (2005)

    Article  ADS  Google Scholar 

  19. A. Nigam, G. Schwabegger, M. Ullah, R. Ahmed, I.I. Fishchuk, A. Kadashchuk, C. Simbrunner, H. Sitter, M. Premaratne, V.R. Rao, Appl. Phys. Lett. 101, 083305 (2012)

    Article  ADS  Google Scholar 

  20. A. Jedaa, M. Halik, Appl. Phys. Lett. 95, 103309 (2009)

    Article  ADS  Google Scholar 

  21. J. Lee, J.H. Kim, S. Im, D.Y. Jung, J. Appl. Phys. 96, 2301 (2004)

    Article  ADS  Google Scholar 

  22. C.J. Dai, H.Y. Tsao, Y.J. Lin, D.S. Liu, Thin Solid Films 552, 159 (2014)

    Article  ADS  Google Scholar 

  23. M. Yamagishi, J. Soeda, T. Uemura, Y. Okada, Y. Takatsuki, T. Nishikawa, Y. Nakazawa, I. Doi, K. Takimiya, J. Takeya, Phys. Rev. B 81, 161306 (2010)

    Article  ADS  Google Scholar 

  24. Y. Okada, K. Sakai, T. Uemura, Y. Nakazawa, J. Takeya, Phys. Rev. B 84, 245308 (2011)

    Article  ADS  Google Scholar 

  25. T. Sekitani, S. Iba, Y. Kato, T. Someya, Jpn. J. Appl. Phys. 44, 2841 (2005)

    Article  ADS  Google Scholar 

  26. H. Lim, H. Yin, J.S. Park, I. Song, C. Kim, J. Park, S. Kim, S.W. Kim, C.B. Lee, Y.C. Kim, Y.S. Park, D. Kang, Appl. Phys. Lett. 93, 063505 (2008)

    Article  ADS  Google Scholar 

  27. H.W. Zan, W.T. Chen, C.C. Yeh, H.W. Hsueh, C.C. Tsai, H.F. Meng, Appl. Phys. Lett. 98, 153506 (2011)

    Article  ADS  Google Scholar 

  28. T.J. Ha, D. Akinwande, A. Dodabalapur, Appl. Phys. Lett. 101, 033309 (2012)

    Article  ADS  Google Scholar 

  29. G. Horowitz, J. Mater. Res. 19, 1946 (2004)

    Article  ADS  Google Scholar 

  30. G. Gu, M.G. Kane, Appl. Phys. Lett. 92, 053305 (2008)

    Article  ADS  Google Scholar 

  31. Y.J. Lin, B.C. Huang, Mater. Chem. Phys. 142, 428 (2013)

    Article  Google Scholar 

Download references

Acknowledgments

The authors acknowledge the support of the Ministry of Science and Technology of Taiwan (Contract No. 103-2112-M-018-003-MY3) in the form of grants.

Author information

Authors and Affiliations

  1. Institute of Photonics, National Changhua University of Education, Changhua, 500, Taiwan

    Yow-Jon Lin

  2. Department of Automatic Control Engineering, Feng Chia University, Taichung, 407, Taiwan

    Hsing-Cheng Chang

  3. Graduate Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, 632, Taiwan

    Day-Shan Liu

Authors
  1. Yow-Jon Lin
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Hsing-Cheng Chang
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Day-Shan Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Yow-Jon Lin.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Lin, YJ., Chang, HC. & Liu, DS. Tuning charge transport in pentacene thin-film transistors using the strain-induced electron–phonon coupling modification. Appl. Phys. A 118, 1205–1210 (2015). https://doi.org/10.1007/s00339-014-8878-1

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s00339-014-8878-1

Keywords

Search

Navigation