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Exact compositional analysis of SiGe alloys by matrix effect compensated MCs+-SIMS

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Abstract

SiGe alloy, owing to its high electron and hole mobility, has potential applications in high-speed microelectronic device technology. The optimization of such technology requires the precise determination of Ge concentration in the full range of composition and the understanding and control of the Ge–Si interdiffusion phenomenon. The most appropriate analytical technique with highest detection sensitivity (∼subparts per billion) for measuring elemental concentration is secondary ion mass spectrometry (SIMS). However, strong compositional dependence of secondary ion yield, i.e. “matrix effect,” has always made SIMS quantification extremely difficult. A procedure for the accurate quantification of Ge concentration in molecular beam epitaxy (MBE)-grown Si1−x Ge x (0<x<0.72) alloys based on MCs+-SIMS approach has been proposed. The “matrix effect” is shown to be completely suppressed for all Ge concentrations irrespective of impact Cs+ ion energies. The novel methodology has successfully been applied for direct quantitative composition analysis of Si/Ge multilayer structure.

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Acknowledgement

B.S, M.S, and M.K.S want to thank Department of Science and Technology, India, for providing the financial support for carrying out experiments at Indian Beamline, Photon Factory, Japan. B.S. wishes to thank Professor T.K. Chini for the availability of the SEM facility for carrying out the EDS measurement. The author gratefully acknowledges Professor Debabrata Ghose and Mr. Safiul Alam Mollick for their time and support in carrying out AFM measurements.

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Authors and Affiliations

  1. Surface Physics Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata, 700064, India

    Biswajit Saha, Purushottam Chakraborty, Manjula Sharma & Milan K. Sanyal

  2. Fachbereich Physik and Institut für Oberflächen- und Schichtanalytik, Technische Universität Kaiserslautern, 67663, Kaiserslautern, Germany

    Hubert Gnaser

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  1. Biswajit Saha
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Correspondence to Purushottam Chakraborty.

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Saha, B., Chakraborty, P., Gnaser, H. et al. Exact compositional analysis of SiGe alloys by matrix effect compensated MCs+-SIMS. Appl. Phys. A 108, 671–677 (2012). https://doi.org/10.1007/s00339-012-6949-8

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