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Heteroepitaxial growth of wide gap p-type semiconductors: LnCuOCh (Lr=La, Pr and Nd; Ch=S or Se) by reactive solid-phase epitaxy

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Abstract

Heteroepitaxial thin films of Cu-based oxychalcogenides, LnCuOCh (Ln = La, Pr and Nd; Ch = mixture of S and Se), were fabricated and their resulting film structures were characterized. A reactive solid-phase epitaxy method successfully yielded heteroepitaxial films on MgO(001) substrates. A high-resolution electron microscopic examination of a LaCuOS film revealed a sharp film-substrate interface. Four-axes high-resolution X-ray diffraction measurements revealed that crystalline lattices in the films are fully relaxed and that the crystallographic orientation is (001)[110] LnCuOCh || (001)[110] MgO. Furthermore, systematic variations in the lattice constant by lanthanide or chalcogen ion substitutions were observed.

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Authors and Affiliations

  1. Hosono Transparent Electro-Active Materials Project, ERATO, Japan Science and Technology Agency, Tokyo, Japan

    H. Hiramatsu, H. Ohta, M. Hirano, T. Kamiya & H. Hosono

  2. Materials and Structures Laboratory, Tokyo Institute of Technology, Tokyo, Japan

    K. Ueda, K. Takafuji, T. Kamiya & H. Hosono

Authors
  1. H. Hiramatsu
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  2. K. Ueda
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  3. K. Takafuji
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  4. H. Ohta
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  5. M. Hirano
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  6. T. Kamiya
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  7. H. Hosono
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Corresponding author

Correspondence to H. Hiramatsu.

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PACS

81.10.Jt; 81.15.-z; 81.15.Np; 68.55.-a; 81.20.-n

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Hiramatsu, H., Ueda, K., Takafuji, K. et al. Heteroepitaxial growth of wide gap p-type semiconductors: LnCuOCh (Lr=La, Pr and Nd; Ch=S or Se) by reactive solid-phase epitaxy. Appl. Phys. A 79, 1517–1520 (2004). https://doi.org/10.1007/s00339-004-2836-2

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  • DOI: https://doi.org/10.1007/s00339-004-2836-2

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