Abstract
During the last two decades, III-nitride-based quantum dots (QDs) have attracted great attentions for optoelectronic applications due to their unique electronic properties. In this paper, we first present an overview on the techniques of fabrication for III-nitride-based QDs. Then various optoelectronic devices such as QD lasers, QD light-emitting diodes (LEDs), QD infrared photodetectors (QDIPs) and QD intermediate band (QDIB) solar cells (SCs) are discussed. Finally, we focus on the future research directions and how the challenges can be overcome.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
S. C. Jain, M. WIllander, J. Narayan and R. V. Overstraeten, J. Appl. Phys. 87, 965 (2000). http://dx.doi.org/10.1063/1.371971
T. Matsuoka, H. Okamoto, M. Nakao, H. Harima and E. Kurimoto, Appl. Phys. Lett. 81, 1246 (2002). http://dx.doi.org/10.1063/1.1499753
I. Vurgaftman and J. R. Meyer, J. Appl. Phys. 94, 3675 (2003). http://dx.doi.org/10.1063/1.1600519
P. Ruterana, S. Kret, A. Vivet, G. Maciejewski and P. Dluzewski, J. Appl. Phys. 91, 8979 (2002). http://dx.doi.org/10.1063/1.1473666
T. Mukai, M. Yamada and S. Nakamura, Jpn. J. Appl. Phys. 38, 3976 (1999). http://dx.doi.org/10.1143/JJAP.38.3976
M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek and Y. Park, Appl. Phys. Lett. 91, 183507 (2007). http://dx.doi.org/10.1063/1.2800290
S. F. Chichibu, T. Sota, K. Wada and S. Nakamura, J. Vac. Sci. Technol. B 16, 2204 (1998). http://dx.doi.org/10.1116/1.590149
Y. C. Shen, G. O. Müller, S. Watanabe, N. F. Gardner, A. Munkholm and M. R. Krames, Appl. Phys. Lett. 91, 141101 (2007). http://dx.doi.org/10.1063/1.2785135
M. Zhang, P. Bhattacharya, J. Singh and J. Hinckley, Appl. Phys. Lett. 95, 201108 (2009). http://dx.doi.org/10.1063/1.3266520
P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche and K. H. Ploog, Nature 406, 865(2000). http://dx.doi.org/10.1038/35022529
N. A. Shapiro, H. Feick, W. Hong, M. Cich, R. Armitage and E. R. Weber, J. Appl. Phys. 94, 4520 (2003). http://dx.doi.org/10.1063/1.1607521
K. Tachibana, T. Someya, Y. Arakawa, R. Werner and A. Forchel, Appl. Phys. Lett. 75, 2605 (1999). http://dx.doi.org/10.1063/1.125092
Y. Narukawa, Y. Kawami, M. Funato, Shizuo Fujita and Shigeo Fujita, Appl. Phys. Lett. 70, 981 (1997). http://dx.doi.org/10.1063/1.118455
E. Monroy, F. Guillot, S. Leconte, L. Nevou, L. Doyennette, M. Tchernycheva, F. H. Julien, E. Baumann, F. R. Giorgetta and D. Hofstetter, J. Mater. Sci.: Mater. Electron. 19, 821 (2008). http://dx.doi.org/10.1007/s10854-007-9482-3
E. Cánovas, A. Martí and W. Walukiewicz, Appl. Phys. Lett. 93, 174109 (2008). http://dx.doi.org/10.1063/1.3013570
M. Zhang, P. Bhattacharya and W. Guo, Appl. Phys. Lett. 97, 011103 (2010). http://dx.doi.org/10.1063/1.3460921
T. D. Moustakas, T. Xu, C. Thomidis, A. Y. Nikiforov, L. Zhou and D. J. Smith, phys. stat. sol. A 205, 2560 (2008). http://dx.doi.org/10.1002/pssa.200880222
B. Daudin, F. Widmann, G. Feuillet, Y. Samson, M. Arlery and J. L. Rouviére, Phys. Rev. B 56, R7069 (1997). http://dx.doi.org/10.1103/PhysRevB.56.R7069
B. Damilano, N. Grandjean, F. Semond, J. Massies and M. Leroux, Appl. Phys. Lett. 75, 962 (1999). http://dx.doi.org/10.1063/1.124567
C. Adelmann, J. Simon, N. Pelekanos, Y. Samson, G. Feuillet and B. Daudin, Phys. Stat. Sol. (a) 176, 639 (1999). http://dx.doi.org/10.1002/(SICI)1521-396X(199911)176:1<639::AID-PSSA639>3.0.CO;2-Z
K. Tachibana, T. Someya and Y. Arakawa, Appl. Phys. Lett. 74, 383 (1999). http://dx.doi.org/10.1063/1.123078
L. W. Ji, Y. K. Su, S. J. Chang, L. W. Wu, T. H. Fang, J. F. Chen, T. Y. Tsai, Q. K. Xue and S. C. Chen, J. Cryst. Growth 249, 144 (2003). http://dx.doi.org/10.1016/S0022-0248(02)02130-9
L. W. Ji, Y. K. Su, S. J. Chang, L. W. Wu, T. H. Fang, Q. K. Xue, W. C. Lai and Y. Z. Chiou, Mater. Lett. 57, 4218 (2003). http://dx.doi.org/10.1016/S0167-577X(03)00293-3
S. Tanaka, S. Iwai and Y. Aoyagi, Appl. Phys. Lett. 69, 4096 (1996). http://dx.doi.org/10.1063/1.117830
X. Q. Shen, S. Tanaka, S. Iwai and Y. Aoyagi, Appl. Phys. Lett. 72, 344 (1998). http://dx.doi.org/10.1063/1.120731
H. Hirayama, S. Tanaka, P. Ramvall and Y. Aoyagi, Appl. Phys. Lett. 72, 1736 (1998). http://dx.doi.org/10.1063/1.121168
A. Koukitsu, N. Takahashi, T. Taki and H. Seki, Jpn. J. Appl. Phys. 35, L673 (1996). http://dx.doi.org/10.1143/JJAP.35.L673
I-h. Ho and G. B. Stringfellow, Appl. Phys. Lett. 69, 2701 (1996). http://dx.doi.org/10.1063/1.117683
L. Nistor, H. Bender, A. Vantomme, M. F. Wu, J. V. Landuyt, K. P. O’Donnell, R. Martin, K. Jacobs and I. Moerman, Appl. Phys. Lett. 77, 507 (2000). http://dx.doi.org/10.1063/1.127026
J. Wang, M. Nozak, M. Laehab, Y. Ishikawa, R. S. QhalidFareed, T. Wang, M. Hao and S. Sakai, Appl. Phys. Lett. 75, 950 (1999). http://dx.doi.org/10.1063/1.124564
J. L. Merz, S. Lee and J. K. Furdyna, J. Cryst. Growth 184, 228 (1998). http://dx.doi.org/10.1016/S0022-0248(98)80050-X
Y. Arakawa and H. Sakaki, Appl. Phys. Lett. 40, 939 (1982). http://dx.doi.org/10.1063/1.92959
Y. Arakawa, T. Someya and K. Tachibana, IEICE Trans. Electron. E83-C, 564 (2000).
T. Uenoyama, Phys. Rev. B 51, 10228 (1995).http://dx.doi.org/10.1103/PhysRevB.51.10228
W. Huang and F. Jain, J. Appl. Phys. 87, 7354 (2000). http://dx.doi.org/10.1063/1.372993
S. Schulz and E. P. O’Reilly, Phys. Rev. B 82, 033411 (2010). http://dx.doi.org/10.1103/PhysRevB.82.033411
Y. R. Wu, Y. Y. Lin, H. H. Huang and J. Singh, J. Appl. Phys. 105, 013117 (2009). http://dx.doi.org/10.1063/1.3065274
S. Tanaka, H. Hirayama, Y. Aoyagi, Y. Narukawa, Y. Kawakami, Shizuo Fujita and Shigeo Fujita, Appl. Phys. Lett. 71, 1299 (1997). http://dx.doi.org/10.1063/1.119877
J. S. Huang, Z. Chen, X. D. Luo, Z. Y. Xua and W. K. Ge, J. Cryst. Growth 260, 13 (2004). http://dx.doi.org/10.1016/j.jcrysgro.2003.08.008
R. A. Oliver, G. A. D. Briggs, M. J. Kappers, C. J. Humphreys, S. Yasin, J. H. Rice, J. D. Smith and R. A. Taylor, Appl. Phys. Lett. 83, 755 (2003). http://dx.doi.org/10.1063/1.1595716
M. Zhang, A. Banerjee, C. S. Lee, J. M. Hinckley and P. Bhattacharya, Appl. Phys. Lett. 98, 221104 (2011). http://dx.doi.org/10.1063/1.3596436
F. Widmann, J. Simon, B. Daudin, G. Feuillet, J. L. Rouviere, N. T. Pelekanos and G. Fishman, Phys. Rev. B 58, R15989 (1998). http://dx.doi.org/10.1103/PhysRevB.58.R15989
L. W. Ji, Y. K. Su, S. J. Chang, C. S. Chang, L. W. Wu, W. C. Lai, X. L. Du and H. Chen, J. Cryst. Growth 263, 114 (2004). http://dx.doi.org/10.1016/j.jcrysgro.2003.08.083
Y. K. Su, S. J. Chang, L. W. Ji, C. S. Chang, L. W. Wu, W. C. Lai, T. H. Fang and K. T. Lam, Semicond. Sci. Technol. 19, 389 (2004).http://dx.doi.org/10.1088/0268-1242/19/3/016
S. Nakamura, S. Senoh, N. Iwasa and S. Nagahama, Jpn. J. Appl. Phys. 34, L797 (1995). http://dx.doi.org/10.1143/JJAP.34.L797
C. C. Pan, C. M. Lee, J. W. Liu, G. T. Chen and J. I. Chyi, Appl. Phys. Lett. 84, 5249 (2004). http://dx.doi.org/10.1063/1.1765207
M. K. Kwon, I. K. Park, S. H. Baek, J. Y. Kim and S. J. Park, J. Appl. Phys. 97, 106109 (2005). http://dx.doi.org/10.1063/1.1904151
C. Adelmann, J. Simon, G. Feuillet, N. T. Pelekanos, B. Daudin and G. Fishman, Appl. Phys. Lett. 76, 1570 (2000). http://dx.doi.org/10.1063/1.126098
I. K. Park, M. K. Kwon, S. B. Seo, J. Y. Kim, J. H. Lim and S. J. Park, Appl. Phys. Lett. 90, 111116 (2007). http://dx.doi.org/10.1063/1.2712804
I. K. Park, M. K. Kwon, J. O. Kim, S. B. Seo, J. Y. Kim, J. H. Lim, S. J. Park and Y. S. Kim, Appl. Phys. Lett. 91, 133105 (2007). http://dx.doi.org/10.1063/1.2790783
Y. L. Chang, J. L. Wang, F. Li and Z. Mi, Appl. Phys. Lett. 96, 013106 (2010). http://dx.doi.org/10.1063/1.3284660
P. Bhattacharya, M. Zhang and J. Hinckley, Appl. Phys. Lett. 97, 251107 (2010). http://dx.doi.org/10.1063/1.3527935
M. Tchernycheva, L. Nevou, L. Doyennette, F. H. Julien, E. Warde, F. Guillot, E. Monroy, E. Bellet-Amalric, T. Remmele and M. Albrecht, Phys. Rev. B 73, 125347 (2006). http://dx.doi.org/10.1103/PhysRevB.73.125347
A. Asgari and S. Razi, Opt. Exp. 18, 14604, (2010). http://dx.doi.org/10.1364/OE.18.014604
D. Pan, E. Towe and S. Kennerly, Appl. Phys. Lett. 73, 1937 (1998). http://dx.doi.org/10.1063/1.122328
A. Stiff, S. Krishna, P. Bhattacharya and S. Kennerly, Appl. Phys. Lett. 79, 421 (2001). http://dx.doi.org/10.1063/1.1385584
L. Jiang, S. S. Li, N. Yeh, J. Chyi, C. E. Ross and K. S. Jones, Appl. Phys. Lett. 82, 1986 (2003). http://dx.doi.org/10.1063/1.1540240
S. Y. Wang, M. C. Lo, H. Y. Hsiao, H. S. Ling and C. P. Lee, Infra. Phys. Technol. 50, 166 (2007). http://dx.doi.org/10.1016/j.infrared.2006.10.027
U. Bockelmann and G. Bastard, Phys. Rev. B 42, 8947 (1990). http://dx.doi.org/10.1103/PhysRevB.42.8947
Z. Ye, J. C. Campbell, Z. Chen, E.-T. Kim and A. Madhukar, Appl. Phys. Lett. 83, 1234 (2003). http://dx.doi.org/10.1063/1.1597987
S. Chakrabarti, A. D. Stiff-Roberts, P. Bhattacharya, S. Gunapala, S. Bandara, S. B. Rafol and S. W. Kennerly, IEEE Photon. Technol. Lett. 16, 1361 (2004). http://dx.doi.org/10.1109/LPT.2004.825974
S. F. Tang, C. D. Chiang, P. K. Weng, Y. T. Gau, J. J. Luo, S. T. Yang, C. C. Shih, S. Y. Lin and S. C. Lee, IEEE Photon. Technol. Lett. 18, 986 (2006). http://dx.doi.org/10.1109/LPT.2006.873458
L. Doyennette, L. Nevou, M. Tchernycheva, A. Lupu, F. Guillot, E. Monroy, R. Colombelli and F. H. Julien, Electron. Lett. 41, 1077 (2005). http://dx.doi.org/10.1049/el:20052598
A. Vardi, N. Akopian, G. Bahir, L. Doyennette, M. Tchernycheva, L. Nevou, F. H. Julien, F. Guillot and E. Monroy, Appl. Phys. Lett. 88, 143101 (2006). http://dx.doi.org/10.1063/1.2186108
L. Doyennettea, A. Vardib, F. Guillotc, L. Nevoua, M. Tchernychevaa, A. Lupua, R. Colombellia, G. Bahirb, E. Monroyc and F. H. Juliena, Superlattices and Microstructures 40, 262 (2006). http://dx.doi.org/10.1016/j.spmi.2006.09.017
M. Tchernycheva, L. Nevou, L. Doyennette, A. Helman, R. Colombelli, F. H. Julien, F. Guillot, E. Monroy, T. Shibata and M. Tanaka, Appl. Phys. Lett. 87, 101912 (2005). http://dx.doi.org/10.1063/1.2042540
F. Guillot, E. Bellet-Amalric, E. Monroy, M. Tchernycheva, L. Nevou, L. Doyennette, F. H. Julien, Le Si Dang, T. Remmele M. Albrecht, T. Shibata and M. Tanaka, J. Appl. Phys. 100, 044326 (2006). http://dx.doi.org/10.1063/1.2335400
A. Luque, A. Martí, P. Wahnon, L. Cuadra, C. Tablero, C. Stanley, A. McKee, D. Zhou, R. Konenkamp, R. Bayón, A. Belaidi, J. Alonso, J. Ruiz, J. Fernández, P. Palacios and N. López, in: Proceedings of the 29th IEEE PVSC, New Orleans, LA, 1190, (2002). http://dx.doi.org/10.1109/PVSC.2002.1190820
G. Cassaboisa, C. Kammerera, C. Voisin, C. Delalande, P.Ph. Roussignol and J.M. Gérard, Physica E 13, 105 (2002). http://dx.doi.org/10.1016/S1386-9477(01)00497-0
A. Luque and A. Martí, Phys. Rev. Lett. 78, 5014 (1997). http://dx.doi.org/10.1103/PhysRevLett.78.5014
H. Movla, F. Sohrabi, J. Fathi, H. Babaei, A. Nikniazi, K. Khalili and N. Gorji, Turk. J. Phys. 34, 97 (2010). http://dx.doi.org/10.3906/fiz-1002-19
N. Gorji, H. Movla, F. Sohrabi, A. Hosseinpour, M. Rezaei and H. Babaei, Physica E 42, 2353 (2010). http://dx.doi.org/10.1016/j.physe.2010.05.014
A. Rostami, K. Abbasian and N. Gorji, IJTPE Journal 3, 106 (2011).
Q. Deng, X. Wang, C. Yang, H. Xiao, C. Wang, H. Yin, Q. Hou, J. Li, Z. Wang and X. Hou, Physica B 406, 73 (2011). http://dx.doi.org/10.1016/j.physb.2010.10.020
S. Kako, C. Santori, K. Hoshino, S. Götzinger, Y. Yamamoto and Y. Arakawa, nature materials 5, 887 (2006). http://dx.doi.org/10.1038/nmat1763
A. F. Jarjour, R. A. Oliver and R. A. Taylor, phys. stat. sol. A 206, 2510 (2009). http://dx.doi.org/10.1002/pssa.200824455
H. Dartsch, C. Tessarek, T. Aschenbrenner, S. Figge, C. Kruse, M. Schowalter, A. Rosenauer and D. Hommel, J. Cryst. Growth 320, 28 (2011). http://dx.doi.org/10.1016/j.jcrysgro.2010.12.008
L. Nevou, F. H. Julien, M. Tchernycheva, F. Guillot, E. Monroy and E. Sarigiannidou, Appl. Phys. Lett. 92, 161105 (2008). http://dx.doi.org/10.1063/1.2913756
B. Lounis and M. Orrit, Rep. Prog. Phys. 68, 1129 (2005). http://dx.doi.org/10.1088/0034-4885/68/5/R04
E. Knill, R. Laflamme and G. J. Milburn, Nature 409, 46 (2001). http://dx.doi.org/10.1038/35051009
S. J. Pearton, J. C. Zolper, R. J. Shul and F. Ren, J. Appl. Phys. 86, 1 (1999). http://dx.doi.org/10.1063/1.371145
S. Nakamura, Science 281, 956 (1998). http://dx.doi.org/10.1126/science.281.5379.956
M. Hansen, P. Fini, L. Zhao, A. C. Abare, L. A. Coldren, J. S. Speck and S. P. DenBaars, Appl. Phys. Lett. 76, 529 (2000). http://dx.doi.org/10.1063/1.125808
J. D. Heber, C. Gmachl, H. M. Ng and A. Y. Cho, Appl. Phys. Lett. 81, 1237 (2002). http://dx.doi.org/10.1063/1.1500412
R. Singh, D. Doppalapudi T. D. Moustakas and L. T. Romano, Appl. Phys. Lett. 70, 1089 (1997). http://dx.doi.org/10.1063/1.118493
K. Dovidenko, S. Oktyabrsky, J. Narayan and M. Razeghi, J. Appl. Phys. 79, 2439 (1996). http://dx.doi.org/10.1063/1.361172
F. A. Ponce and D. P. Bour, Nature 386, 351 (1997). http://dx.doi.org/10.1038/386351a0
F. Bernardini, V. Fiorentini and D. Vanderbilt, Phys. Rev. B 56, R10024 (1997). http://dx.doi.org/10.1103/PhysRevB.56.R10024
Q. Wang, T. Wang, J. Bai, A. G. Cullis, P. J. Parbrook and F. Ranalli, J. Appl. Phys. 103, 123522 (2008). http://dx.doi.org/10.1063/1.2939568
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made.
The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder.
To view a copy of this licence, visit https://creativecommons.org/licenses/by/4.0/.
About this article
Cite this article
Weng, G.E., Ling, A.K., Lv, X.Q. et al. III-Nitride-Based Quantum Dots and Their Optoelectronic Applications. Nano-Micro Lett. 3, 200–207 (2011). https://doi.org/10.1007/BF03353673
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/BF03353673