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Thermoelectric properties of the 0.05 wt.% SbI3-Doped n-Type Bi2(Te0. 95Se0. 05)3 alloy fabricated by the hot pressing method

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Abstract

Thermoelectric properties of the 0.05 wt.% SbI3-doped n-type Bi2(Teo.95Seo.o5)3 alloy, fabricated by hot pressing at temperatures ranging from 350°C to 550°C, were characterized. The electron concentration of the alloy decreased as the hot pressing temperature increased due to the annealing-out of the excess Te vacancies. When hot pressed at 350°C, a figure-of-merit of 0.75x10-3/K was obtained due to the low Seebeck coefficient of -145 µV/K and relatively high electrical resistivity of 2.05 mΩ-cm. Upon increasing the hot pressing temperature, however, the figure-of-merit was improved mainly due to the increase of the Seebeck coefficient. A maximum figure-of-merit of 2.1x10-3/K was obtained by hot pressing at 550°C.

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Authors and Affiliations

  1. Department of Metallurgical Engineering and Materials Science, Hong Ik University, 72-1 Sangsu-dong, Mapo-ku, 121-791, Seoul, Korea

    Sun Kyung Lee, Tae Sung Oh, Dow Bin Hyun & Chang Won Hwang

  2. Center for Metals Processing, Korea Institute of Science and Technology, 39-1 Haweolkok-dong, Seongbuk-ku, 136-791, Seoul, Korea

    Dow Bin Hyun

  3. Thermotek Ltd., 45-10 Nowon-ree, Eawall-myon, Jinchun-gun, 365-820, Choongbook, Korea

    Chang Won Hwang

Authors
  1. Sun Kyung Lee
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  2. Tae Sung Oh
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  3. Dow Bin Hyun
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Lee, S.K., Oh, T.S., Hyun, D.B. et al. Thermoelectric properties of the 0.05 wt.% SbI3-Doped n-Type Bi2(Te0. 95Se0. 05)3 alloy fabricated by the hot pressing method. Metals and Materials 6, 67–71 (2000). https://doi.org/10.1007/BF03026347

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