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Étude du comportement du transistor à effet de champ au GaAs sous injection optique quasi ponctuelle

Mesfet behaviour under localised optical beam injection

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Cet article décrit les phénomènes observés lorsqu’untec à barrière de Schottky est éclairé par une tache circulaire quasi ponctuelle de diamètre 1,5 μm environ. Les différentes zones désertées du composant sont mises en évidence par cette technique. L’effet photovoltaïque associé à ces zones et l’effet photoconducteur dans le canal permettent d’expliquer en partie les résultats expérimentaux. Les valeurs élevées obtenues pour la sensibilité de photoconduction sont attribuées au phénomène de photo conduct ion luimême et à l’élargissement du canal du côté substrat et du côté surface.

Abstract

This paper describes the observed phenomena while amesfetis illuminated with a circular spot of about 1.5 μmdiameter. The various depletion regions of the device are highlighted by this technique. The experimental results can partly be explained by the photovoltaic effect associated with these depletion regions and the photoconductive effect in the channel. The high values obtained for the photoconduction responsivity are ascribed to the photoconduction mecanism itself and to the widening of the channel at the substrate interface and at the surface.

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Authors and Affiliations

  1. CNET-LAB-MER-MLS, route de Trégastel, B.P. 40, 22301, Lannion Cedex

    Jean-Michel Rouger, Robert Périchon & Serge Mottet

  2. Microwave Research Unit, University College London, Torrington Place, WC1E7JE, London, UK

    John R. Forrest

Authors
  1. Jean-Michel Rouger
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  2. Robert Périchon
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  3. Serge Mottet
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  4. John R. Forrest
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Rouger, JM., Périchon, R., Mottet, S. et al. Étude du comportement du transistor à effet de champ au GaAs sous injection optique quasi ponctuelle. Ann. Télécommun. 40, 88–97 (1985). https://doi.org/10.1007/BF02997834

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  • DOI: https://doi.org/10.1007/BF02997834

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