Abstract
A complete numerical simulation package for submicron photolithography is described in depth. Four of the computational steps are analyzed: aerial image generation, exposure, postexposure bake, and dissolution. An application to bar printing over a MOSFET gate is described. In addition, the utility of phase-shift masks is described, and the effects of aberrations are explored.
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Barouch, E., Cahn, J.W., Hollerbach, U. et al. Numerical simulation of submicron photolithographic processing. J Sci Comput 6, 229–250 (1991). https://doi.org/10.1007/BF01062811
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DOI: https://doi.org/10.1007/BF01062811