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High Charge Carrier Mobility in Two Dimensional Indium (III) Isophthalic Acid Based Frameworks

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Abstract

The effect of dimensionality (1D to 2D) on charge carrier mobility have been studied thoroughly on three In(III)-isophthalate based MOFs [In-IA-1D, In-IA-2D-1 and -2]. In-IA-1D possess 1D nanotubular architecture with [(CH3)2NH2]+. In-IA-2D-1 have 2D layers containing only [(CH3)2NH2]+ cations. Whereas, In-IA-2D-2 have [(CH3)2NH2]+ cations as well as solvent DMF molecule inside the crystal structure. Due to presence of the π–π stacking arrangement among the phenyl rings of IA moieties facilitates the high charge carrier mobility (4.6 × 10−3 cm2 V−1 s−1 at VG = −40 V) in In-IA-2D-2. However, In-IA-1D and In-IA-2D-1 does not show any charge carrier mobility due to absence of π–π stacking arrangement.

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Acknowledgments

TP acknowledge CSIR for SRF. RB acknowledges CSIR’s Five Year Plan Project (CSC0122 and CSC0102) for funding. Financial assistance from BRNS (2011/37C/44/BRNS) is acknowledged. We also acknowledge Dr K. Krishnamoorthy and Mr Arulraj Arulkashmir for their kind help regarding charge carrier mobility studies.

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  1. Physical/Materials Chemistry Division, CSIR National Chemical Laboratory, Dr. Homi Bhaba Road, Pune, 411008, India

    Tamas Panda & Rahul Banerjee

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  1. Tamas Panda
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  2. Rahul Banerjee
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Correspondence to Rahul Banerjee.

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Panda, T., Banerjee, R. High Charge Carrier Mobility in Two Dimensional Indium (III) Isophthalic Acid Based Frameworks. Proc. Natl. Acad. Sci., India, Sect. A Phys. Sci. 84, 331–336 (2014). https://doi.org/10.1007/s40010-014-0152-6

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  • DOI: https://doi.org/10.1007/s40010-014-0152-6

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