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Self-Rectifying Effect in Resistive Switching Memory Using Amorphous InGaZnO

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Abstract

Resistance random access memory (ReRAM) has received attention as next-generation memory because of its excellent operating properties and high density integration capability as a crossbar array. However, the application of the existing ReRAM as a crossbar array may lead to crosstalk between adjacent cells due to its symmetric I–V characteristics. In this study, the self-rectifying effect of contact between amorphous In-Ga-Zn-O (a-IGZO) and TaO x was examined in a Pt/a-IGZO/TaO x /Al2O3/W structure. The experimental results show not only self-rectifying behavior but also forming-free characteristics. During the deposition of a-IGZO on the TaO x , an oxygen-rich TaO x interfacial layer was formed. The rectifying effect was observed regardless of the interface formation and is believed to be associated with Schottky contact formation between a-IGZO and TaO x . The current level remained unchanged despite repeated DC sweep cycles. The low resistance state/high resistance state ratio was about 101 at a read voltage of −0.5 V, and the rectifying ratio was about 103 at ±2 V.

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References

  1. D. Tu, M. Liu, L. Shang, X. Liu, and C. Xie, Appl. Phys. Lett. 92, 123302 (2008).

    Article  Google Scholar 

  2. Y.C. Shin, J. Song, K.M. Kim, B.J. Choi, S. Choi, H.J. Lee, G.H. Kim, T. Eom, and C.S. Hwang, Appl. Phys. Lett. 92, 162904 (2008).

    Article  Google Scholar 

  3. H. Shima, F. Takano, H. Muramatsu, H. Akinaga, I.H. Inoue, and H. Takagi, Appl. Phys. Lett. 92, 043510 (2008).

    Article  Google Scholar 

  4. B.S. Kang, S.E. Ahn, M.J. Lee, G. Steftinovich, K.H. Kim, W.X. Xianyu, C.B. Lee, Y. Park, I.G. Baek, and B.H. Park, Adv. Mater. (Weinheim, Ger.) 20, 3066 (2008).

    Article  Google Scholar 

  5. M.J. Lee, Y. Park, B.S. Kang, S.E. Ahn, C. Lee, K. Kim, W. Xianyu, G. Stefanovich, J.H. Lee, S.J. Chung, Y.H. Kim, C.S. Lee, J.B. Park, and I.K. Yoo, IEEE Int. Electron Dev. Meet. Tech. Dig. 771 (2007).

  6. M.-J. Lee, S.I. Kim, C.B. Lee, H. Yin, S.-E. Ahn, B.S. Kang, K.H. Kim, J.C. Park, C.J. Kim, I. Song, S.W. Kim, G. Stefanovich, J.H. Lee, S.J. Chung, Y.H. Kim, and Y. Park, Adv. Funct. Mater. 19, 1587 (2009).

    Article  Google Scholar 

  7. D.S. Golubović, A.H. Miranda, N. Akil, R.T.F. van Schaijk, and M.J. van Duuren, Microelectron. Eng. 84, 2921 (2007).

    Article  Google Scholar 

  8. K.P. Biju, X.J. Liu, E.M. Bourim, I. Kim, S. Jung, M. Siddik, J. Lee, and H. Hwang, J. Phys. D 43, 495104 (2010).

    Article  Google Scholar 

  9. J–.J. Huang, C.-W. Kuo, W.-C. Chang, and T.-H. Hou, Appl. Phys. Lett. 96, 262901 (2010).

    Article  Google Scholar 

  10. X.G. Chen, X.B. Ma, Y.B. Yang, L.P. Chen, G.C. Xiong, G.J. Lian, Y.C. Yang, and J.B. Yang, Appl. Phys. Lett. 98, 122102 (2011).

    Article  Google Scholar 

  11. A. Sawa, T. Fujii, M. Kawasaki, and Y. Tokura, Appl. Phys. Lett. 85, 4073 (2004).

    Article  Google Scholar 

  12. T. Fujii, M. Kawasaki, A. Sawa, H. Akoh, Y. Kawazoe, and Y. Tokura, Appl. Phys. Lett. 86, 012107 (2005).

    Article  Google Scholar 

  13. Z. Wei, Y. Kanzawa, K. Arita, Y. Katoh, K. Kawai, S. Muraoka, S. Mitani, S. Fujii, K. Katayama, M. Iijima, T. Mikawa, T. Ninomiya, R. Miyanaga, Y. Kawashima, K. Tsuji, A. Himeno, T. Okada, R. Azuma, K. Shimakawa, H. Sugaya, T. Takagi, R. Yasuhara, K. Horiba, H. Kumigashira, and M. Oshima, IEEE Int. Electron Devices Meet. Tech. Dig. 293, 5671467 (2008).

    Google Scholar 

  14. J.H. Hur, M.-J. Lee, C.B. Lee, Y.-B. Kim, and C.-J. Kim, Phys. Rev. B 82, 155321 (2010).

    Article  Google Scholar 

  15. K. Nomura, T. Kamiya, E. Ikenaga, H. Yanagi, K. Kobayashi, and H. Hosono, J. Appl. Phys. 109, 073726 (2011).

    Article  Google Scholar 

  16. D.H. Lee, K. Nomura, T. Kamiya, and H. Hosono, IEEE Electron Device Lett. 32, 1695 (2011).

    Article  Google Scholar 

  17. A. Suresh, P. Gollakota, P. Wellenius, A. Dhawan, and J.F. Muth, Thin Solid Films 516, 1326 (2008).

    Article  Google Scholar 

  18. K. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, Jpn. J. Appl. Phys. 45, 4303 (2006).

    Article  Google Scholar 

  19. J.-R. Yim, S.-Y. Jung, H.-W. Yeon, J.-Y. Kwon, Y.-J. Lee, J.-H. Lee, and Y.-C. Joo, Jpn. J. Appl. Phys. 51, 011401 (2012).

    Google Scholar 

  20. C.-Y. Lin, C.-W. Chien, C.-H. Wu, H–.H. Hsieh, C.-C. Wu, Y.-H. Yeh, C.-C. Cheng, C.-M. Lai, and M.-J. Yu, IEEE Trans. Electron Devices 59, 1701 (2012).

    Article  Google Scholar 

  21. T.-C. Fung, C.-S. Chuang, C. Chen, K. Abe, R. Cottle, M. Townsend, H. Kumomi, and J. Kanicki, J. Appl. Phys. 106, 084511 (2009).

    Article  Google Scholar 

  22. H.-W. Zan, W.-T. Chen, C–.C. Yeh, H.-W. Hsueh, C.-C. Tsai, and H.-F. Meng, Appl. Phys. Lett. 98, 153506 (2011).

    Article  Google Scholar 

  23. M.-J. Lee, C.B. Lee, D. Lee, S.R. Lee, M. Chang, J.H. Hur, Y.-B. Kim, C.-J. Kim, D.H. Seo, S. Seo, U.-I. Chung, I.-K. Yoo, and K. Kim, Nat. Mater. 10, 625 (2011).

    Article  Google Scholar 

  24. S. Jeon, S. Park, I. Song, J.-H. Hur, J. Park, H. Kim, S. Kim, S. Kim, H. Yin, U.-I. Chung, E. Lee, and C. Kim, Appl. Mater. Inter. 3, 1 (2011).

    Article  Google Scholar 

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Acknowledgement

This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea government (MSIP) (2005-0049407, ERC Program, Center for Materials and Processes of Self-Assembly).

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Hanyang University, Seoul, 133-791, Korea

    Jin-Woo Lee, Hyeon-Min Kwon, Myeong-Ho Kim & Duck-Kyun Choi

  2. Semiconductor Laboratory, Samsung Advanced Institute of Technology, Gyeonggi-do, Yongin, 446-712, Korea

    Seung-Ryul Lee & Young-Bae Kim

Authors
  1. Jin-Woo Lee
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  2. Hyeon-Min Kwon
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  3. Myeong-Ho Kim
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  4. Seung-Ryul Lee
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Correspondence to Duck-Kyun Choi.

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Lee, JW., Kwon, HM., Kim, MH. et al. Self-Rectifying Effect in Resistive Switching Memory Using Amorphous InGaZnO. J. Electron. Mater. 43, 1384–1388 (2014). https://doi.org/10.1007/s11664-014-3083-8

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  • DOI: https://doi.org/10.1007/s11664-014-3083-8

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