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Bipolar Resistive Switching Characteristics of Ta/TaxMnyOz/Pt Structure for ReRAM Application with Large Resistance Window

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Abstract

In this study, a resistive random-access memory device based on a Ta/TaxMnyOz/Pt metal–insulator–metal structure was fabricated and examined. The test device exhibited stable bipolar resistive switching characteristics with DC endurance of more than 300 cycles and robust retention up to 104 s at room temperature. Moreover, the device had a low forming voltage and a resistance window of ~ 103. The conduction mechanism in each resistance state of the device was analyzed through current–voltage curve fitting. It was confirmed that the primary conduction mechanisms were ohmic and Poole–Frenkel conduction in the low- and high-resistance states, respectively. By analyzing the cross section of the fabricated device through transmission electron microscopy, it was found that the TaxMnyOz layer was deposited in amorphous form. The composition and chemical bonding state of the TaxMnyOz layer were also analyzed using X-ray photoelectron spectroscopy. With these characteristics, the amorphous TaxMnyOz layer has strong potential for nonvolatile memory applications.

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Acknowledgements

This study was supported by Samsung Electronics Co., Ltd. (IO201211-08069-01) and by the Korea Basic Science Institute(KBSI) National Research Facilities & Equipment Center(NFEC) grant funded by the Korea government(Ministry of Education) (No. 2019R1A6C1010031). The authors are grateful for the support of the Cooperative Center for Research Facilities at Sungkyunkwan University.

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  1. Yunki Kim and Kyu-Jin Jo have contributed equally to this work.

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  1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Korea

    Yunki Kim, Kyu-Jin Jo, Jin-Su Oh & Cheol-Woong Yang

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  1. Yunki Kim
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Correspondence to Cheol-Woong Yang.

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Kim, Y., Jo, KJ., Oh, JS. et al. Bipolar Resistive Switching Characteristics of Ta/TaxMnyOz/Pt Structure for ReRAM Application with Large Resistance Window. Electron. Mater. Lett. 20, 26–32 (2024). https://doi.org/10.1007/s13391-023-00440-5

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