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Depth-resolved correlation between physical and electrical properties of stressed SiNx gate insulator films

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Abstract

The physical and electrical properties of SiNx gate insulator films with compressive and tensile internal stress have been investigated using various characterization techniques. The mechanical hardness measured by nano-indenter system showed the different distribution in the film depth direction according to the type of film stress. The uniformity of optical property inside films had a correspondence to the mechanical properties of stressed SiNx films, as well. The contents and bonding states of hydrogen influenced the mechanical and optical properties of stressed SiNx films. The leakage characteristics of tensile SiNx films with uniform physical properties exhibited the lower current density than the compressive films with ~10−7 A/cm2 until 8 MV/cm. The correlation between physical and electrical properties depending on the internal stress will suggest the appropriate optimization of SiNx gate insulator films to enhance the device performance and reliability.

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References

  1. J.S. Jung, K.S. Son, K.-H. Lee, J.S. Park, T.S. Kim, J.-Y. Kwon, K.-B. Chung, J.-S. Park, B. Koo, S. Lee, Appl. Phys. Lett. 96, 193506 (2010)

    Article  Google Scholar 

  2. X. Hu, A. Koudymov, G. Simin, J. Yang, M. Asif Khan, A. Tarakji, M.S. Shur, R. Gaska, Appl. Phys. Lett. 79, 2832 (2001)

    Article  CAS  Google Scholar 

  3. P.D. Richard, R.J. Markunas, G. Lucovsky, G.G. Fountain, A.N. Mansour, D.V. Tsu, J. Vac. Sci. Technol. A 3, 867 (1985)

    Article  CAS  Google Scholar 

  4. S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo, M. Umeno, Appl. Phys. Lett. 73, 809 (1998)

    Article  CAS  Google Scholar 

  5. M. Higashiwaki, N. Onojima, T. Matsui, T. Mimura, J. Appl. Phys. 100, 033714 (2006)

    Article  Google Scholar 

  6. I. Kobayashi, T. Ogawa, S. Hotta, Jpn. J. Appl. Phys. 31, 336 (1992)

    Article  CAS  Google Scholar 

  7. W.A.P. Glassen, W.G.J.N. Valkenburg, M.F.C. Willemsen, WMvd Wijgert, J. Electronchem. Soc 132, 893 (1985)

    Article  Google Scholar 

  8. S. Kim, B. Kim, Curr. Appl. Phys. 10, S372 (2010)

    Article  Google Scholar 

  9. A.K. Stamper, S.L. Pennington, J. Electrochem. Soc. 140, 1748 (1993)

    Article  CAS  Google Scholar 

  10. W.C. Oliver, G.M. Pharr, J. Mater. Res. 19, 3 (2004)

    Article  CAS  Google Scholar 

  11. S.I. Kim, C.W. Lee, J. Korean Phys. Soc. 55(3), 995 (2009)

    Article  CAS  Google Scholar 

  12. G.E. Jellison Jr., F.A. Modine, Appl. Phys. Lett. 69, 371 (1996)

    Article  CAS  Google Scholar 

  13. S.-W. Chung, J.-H. Shin, N.-H. Park, J.W. Park, Jpn. J. Appl. Phys. 38, 5214 (1999)

    Article  CAS  Google Scholar 

  14. M.L. Green, E.P. Gusev, R. Degraeve, E.L. Garfunkel, J. Appl. Phys. 90, 2057 (2001)

    Article  CAS  Google Scholar 

  15. M. Belyansky, M. Chace, O. Gluschenkov, J. Kempisty, N. Klymko, A. Madan, A. Mallikarjunan, S. Molis, P. Ronsheim, Y. Wang, D. Yang, Y. Li, J. Vac. Sci. Technol. A 26, 517 (2008)

    Article  CAS  Google Scholar 

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Acknowledgments

The present research was conducted by the research fund of Dankook University in 2009

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Dankook University, Dongnamgu Anseodong 29, Cheonan, 330-714, South Korea

    Jin-Seong Park

  2. Department of Nano & Electronic Physics, Kookmin University, Seoul, 136-702, South Korea

    Chang Woo Lee

  3. Nano-Optical Property Laboratory and Department of Physics, Kyung Hee University, Seoul, 130-701, South Korea

    Jae Jin Yoon

  4. Department of Physics, Dankook University, Dongnamgu Anseodong 29, Cheonan, 330-714, South Korea

    Kwun-Bum Chung

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  1. Jin-Seong Park
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  2. Chang Woo Lee
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  3. Jae Jin Yoon
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  4. Kwun-Bum Chung
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Correspondence to Kwun-Bum Chung.

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Park, JS., Lee, C.W., Yoon, J.J. et al. Depth-resolved correlation between physical and electrical properties of stressed SiNx gate insulator films. J Electroceram 26, 63–67 (2011). https://doi.org/10.1007/s10832-010-9628-1

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  • DOI: https://doi.org/10.1007/s10832-010-9628-1

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