Abstract
The high stress SiNx thin film deposition technology is widely used in nano-scale transistor structure to induce strain and improve the carrier transport in the channel region. In this work, the synthesis and process of high tensile stress SiNx thin films have been studied. High tensile stress SiNx thin film is obtained by multiple treatment of N2 plasma. The optimized SiNx films was integrated into the 26 nm transistors and found that the driving current Idsat was improved by 27%.
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Acknowledgements
This work was supported in part by the National Key Project of Science and Technology of China (Grant No. 2017ZX02315001-002), in part by the projects of the construction of new research and development institutions (Grant No. 2019B090904015) and the construction of high-level innovation research institute from the Guangdong Greater Bay Area Institute of Integrated Circuit and System (Grant No. 2019B090909006), in part by the National Key Research and Development Program of China (Grant No. 2016YFA0301701), and the Youth Innovation Promotion Association of CAS under Grant No. 2016112.
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Xu, Q., Xiong, W., Wang, G. et al. Stressor SiNx contact etch stop layer (CESL) technology and its application in nano-scale transistors. J Mater Sci: Mater Electron 31, 10078–10083 (2020). https://doi.org/10.1007/s10854-020-03553-x
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DOI: https://doi.org/10.1007/s10854-020-03553-x