Applied Physics B

, Volume 79, Issue 8, pp 927–932

Towards wafer-scale integration of high repetition rate passively mode-locked surface-emitting semiconductor lasers

Authors

  • D. Lorenser
    • Institute of Quantum Electronics, Physics Department, Swiss Federal Institute of Technology (ETH)ETH Zürich Hönggerberg
    • Institute of Quantum Electronics, Physics Department, Swiss Federal Institute of Technology (ETH)ETH Zürich Hönggerberg
  • D.J.H.C. Maas
    • Institute of Quantum Electronics, Physics Department, Swiss Federal Institute of Technology (ETH)ETH Zürich Hönggerberg
  • A. Aschwanden
    • Institute of Quantum Electronics, Physics Department, Swiss Federal Institute of Technology (ETH)ETH Zürich Hönggerberg
  • R. Grange
    • Institute of Quantum Electronics, Physics Department, Swiss Federal Institute of Technology (ETH)ETH Zürich Hönggerberg
  • R. Paschotta
    • Institute of Quantum Electronics, Physics Department, Swiss Federal Institute of Technology (ETH)ETH Zürich Hönggerberg
  • D. Ebling
    • FIRST Center for Micro- and Nanoscience, Swiss Federal Institute of Technology (ETH)ETH Zürich Hönggerberg
  • E. Gini
    • FIRST Center for Micro- and Nanoscience, Swiss Federal Institute of Technology (ETH)ETH Zürich Hönggerberg
  • U. Keller
    • Institute of Quantum Electronics, Physics Department, Swiss Federal Institute of Technology (ETH)ETH Zürich Hönggerberg
Rapid communication

DOI: 10.1007/s00340-004-1675-3

Cite this article as:
Lorenser, D., Unold, H., Maas, D. et al. Appl. Phys. B (2004) 79: 927. doi:10.1007/s00340-004-1675-3

Abstract

One of the most application-relevant milestones that remain to be achieved in the field of passively mode-locked surface-emitting semiconductor lasers is the integration of the semiconductor absorber into the gain structure, enabling the realization of ultra-compact high-repetition-rate laser devices suitable for wafer-scale integration. We have recently succeeded in fabricating the key element in this concept, a quantum-dot-based saturable absorber with a very low saturation fluence, which for the first time allows stable mode locking of surface-emitting semiconductor lasers with the same mode areas on gain and absorber. Experimental results at high repetition rates of up to 30 GHz are shown.

Copyright information

© Springer-Verlag 2004