Applied Physics B

, Volume 79, Issue 8, pp 927–932

Towards wafer-scale integration of high repetition rate passively mode-locked surface-emitting semiconductor lasers

  • D. Lorenser
  • H.J. Unold
  • D.J.H.C. Maas
  • A. Aschwanden
  • R. Grange
  • R. Paschotta
  • D. Ebling
  • E. Gini
  • U. Keller
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DOI: 10.1007/s00340-004-1675-3

Cite this article as:
Lorenser, D., Unold, H., Maas, D. et al. Appl. Phys. B (2004) 79: 927. doi:10.1007/s00340-004-1675-3

Abstract

One of the most application-relevant milestones that remain to be achieved in the field of passively mode-locked surface-emitting semiconductor lasers is the integration of the semiconductor absorber into the gain structure, enabling the realization of ultra-compact high-repetition-rate laser devices suitable for wafer-scale integration. We have recently succeeded in fabricating the key element in this concept, a quantum-dot-based saturable absorber with a very low saturation fluence, which for the first time allows stable mode locking of surface-emitting semiconductor lasers with the same mode areas on gain and absorber. Experimental results at high repetition rates of up to 30 GHz are shown.

Copyright information

© Springer-Verlag 2004

Authors and Affiliations

  • D. Lorenser
    • 1
  • H.J. Unold
    • 1
  • D.J.H.C. Maas
    • 1
  • A. Aschwanden
    • 1
  • R. Grange
    • 1
  • R. Paschotta
    • 1
  • D. Ebling
    • 2
  • E. Gini
    • 2
  • U. Keller
    • 1
  1. 1.Institute of Quantum Electronics, Physics Department, Swiss Federal Institute of Technology (ETH)ETH Zürich HönggerbergZürichSwitzerland
  2. 2.FIRST Center for Micro- and Nanoscience, Swiss Federal Institute of Technology (ETH)ETH Zürich HönggerbergZürichSwitzerland