Towards wafer-scale integration of high repetition rate passively mode-locked surface-emitting semiconductor lasers
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- Lorenser, D., Unold, H., Maas, D. et al. Appl. Phys. B (2004) 79: 927. doi:10.1007/s00340-004-1675-3
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One of the most application-relevant milestones that remain to be achieved in the field of passively mode-locked surface-emitting semiconductor lasers is the integration of the semiconductor absorber into the gain structure, enabling the realization of ultra-compact high-repetition-rate laser devices suitable for wafer-scale integration. We have recently succeeded in fabricating the key element in this concept, a quantum-dot-based saturable absorber with a very low saturation fluence, which for the first time allows stable mode locking of surface-emitting semiconductor lasers with the same mode areas on gain and absorber. Experimental results at high repetition rates of up to 30 GHz are shown.