Abstract
One of the most application-relevant milestones that remain to be achieved in the field of passively mode-locked surface-emitting semiconductor lasers is the integration of the semiconductor absorber into the gain structure, enabling the realization of ultra-compact high-repetition-rate laser devices suitable for wafer-scale integration. We have recently succeeded in fabricating the key element in this concept, a quantum-dot-based saturable absorber with a very low saturation fluence, which for the first time allows stable mode locking of surface-emitting semiconductor lasers with the same mode areas on gain and absorber. Experimental results at high repetition rates of up to 30 GHz are shown.
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42.55.Px; 42.60.Fc; 42.82.Gw
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Lorenser, D., Unold, H., Maas, D. et al. Towards wafer-scale integration of high repetition rate passively mode-locked surface-emitting semiconductor lasers. Appl. Phys. B 79, 927–932 (2004). https://doi.org/10.1007/s00340-004-1675-3
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DOI: https://doi.org/10.1007/s00340-004-1675-3