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Microstructure and electrical properties of lead zirconate titanate thin films deposited by sol-gel method on La0.7Sr0.3MnO3/SiO2/Si substrate

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Abstract

(La0.7Sr0.3)MnO3 thin films were deposited on SiO2/Si substrates by a metal-organic decomposition (MOD) method, and then Pb(Zr0.52Ti0.48)O3 (PZT) thin films were grown on (La0.7Sr0.3)MnO3-coated SiO2/Si substrates by a sol-gel method. The effects of annealing temperature on the crystalline phases, microstructures and electrical properties of the PZT films were investigated. X-ray diffraction analysis results indicated that the PZT films with a perovskite single phase could be obtained by annealing at 650°C. The dielectric constant and the remnant polarization of the PZT films increased with increasing annealing temperature. The remnant polarization and the coercive field of the films annealed at 650°C were 18.3 μC/cm2 and 35.5 kV/cm, respectively, whereas the dielectric constant and loss value measured at 1 kHz were approximately 1100 and 0.81, respectively.

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Authors and Affiliations

  1. Department of Materials Processing, Graduate School of Engineering, Tohoku University, Aoba-yama 6-6-02, Sendai, 980-8579, Japan

    Zhan Jie Wang, Hirokazu Usuki, Toshihide Kumagai & Hiroyuki Kokawa

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  1. Zhan Jie Wang
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  2. Hirokazu Usuki
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  3. Toshihide Kumagai
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  4. Hiroyuki Kokawa
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Correspondence to Zhan Jie Wang.

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Wang, Z.J., Usuki, H., Kumagai, T. et al. Microstructure and electrical properties of lead zirconate titanate thin films deposited by sol-gel method on La0.7Sr0.3MnO3/SiO2/Si substrate. J Sol-Gel Sci Technol 42, 375–379 (2007). https://doi.org/10.1007/s10971-007-0762-4

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  • DOI: https://doi.org/10.1007/s10971-007-0762-4

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