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Femtosecond dynamics and transport of optically excited electrons in epitaxial Cu films on Si(111)-7×7

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Abstract

Time-resolved two-photon photoemission spectroscopy is used to study ultrafast electron dynamics of epitaxial Cu films grown in situ on a Si(111)-7×7 substrate with 6 to 44 nm thickness. For excitation with femtosecond laser pulses at hν=2.35 eV a pronounced increase of the electron relaxation rates is observed with increasing film thickness and even further in comparison to bulk data. This is attributed to an enhanced energy dissipation in thicker films due to transport of excited carriers into the bulk.

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Authors and Affiliations

  1. Fachbereich Physik, Freie Universität Berlin, Arnimallee 14, 14195, Berlin–Dahlem, Germany

    M. Lisowski, P.A. Loukakos, U. Bovensiepen & M. Wolf

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  1. M. Lisowski
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  2. P.A. Loukakos
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  3. U. Bovensiepen
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  4. M. Wolf
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Correspondence to M. Wolf.

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PACS

73.50.Gr; 73.90.+f; 78.47.+p; 79.60.-i

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Lisowski, M., Loukakos, P., Bovensiepen, U. et al. Femtosecond dynamics and transport of optically excited electrons in epitaxial Cu films on Si(111)-7×7. Appl. Phys. A 79, 739–741 (2004). https://doi.org/10.1007/s00339-004-2591-4

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  • DOI: https://doi.org/10.1007/s00339-004-2591-4

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