Abstract—Epitaxial (111) MgO films on sapphire with (0001) orientation were grown by high-frequency magnetron reactive sputtering. The X-ray structural analysis of the films obtained in combination with layer-by-layer plasma etching showed the presence of a thin transition layer with lattice parameters corresponding to the cubic structure of MgO with signs of rhombohedral strain.
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Luzanov, V.A. Growth Features of Thin Epitaxial Magnesium Oxide Films on Sapphire. J. Commun. Technol. Electron. 64, 720–721 (2019). https://doi.org/10.1134/S1064226919070118
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DOI: https://doi.org/10.1134/S1064226919070118