Skip to main content
SpringerLink
Log in

Precision Etching of Thin Doped Silicon Layers

  • Articles from the Russian Journal Prikladnaya Fizika
  • Published:
Journal of Communications Technology and Electronics Aims and scope Submit manuscript

Abstract

The optimum etchant composition for precise removal of a thin high-doped silicon gettering layer is determined. It is found that the best-controlled etching is provided by the following composition: HNO3: HF: CH3COOH = 40: 1: 1. This composition etches the entire gettering layer away while preserving the required thickness of the contact layer, which prevents the space-charge region of the p–n junction from emerging at the back surface of the base of a photosensitive element. Thus, this etchant provides an opportunity to reduce the magnitude of dark currents and raise the percentage yield.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. I. P. Stepanenko, Fundamentals of the Theory of Transistors and Transistor Circuits (Energiya, Moscow, 1977) [in Russian].

    Google Scholar 

  2. K. V. Ravi, Impurities and Defects in Semiconducting Silicon (Plenum, New York, 1981; Mir, Moscow, 1984).

    Google Scholar 

  3. Zarubezh. Elektron. Tekh., No. 11, 43 (1983).

  4. A. K. Budtolaev, I. A. Evlent’ev, G. V. Liberova, et al., Prikl. Fiz., No. 6, 62 (2015).

    Google Scholar 

  5. B. D. Luft, V. A. Perevoshchikov, L. N. Vozmilova, I. A. Sverdlin, and K. G. Marin, Physical and Chemical Methods of Treatment of Semiconductor Surface, Ed. by B. D. Luft (Radio i Svyaz’, Moscow, 1982) [in Russian].

  6. M. A. Korolev, T. Yu. Krupkina, and M. A. Reveleva, Technology, Designs, and Methods of Modeling of Silicon Integrated Microcircuits, Part 1 (Binom, Moscow, 2015) [in Russian].

    Google Scholar 

  7. V. P. Zaporozhskii and B. A. Lapshinov, Treatment of Semiconductor Materials (Vysshaya Shkola, Moscow, 1988) [in Russian].

    Google Scholar 

  8. Yu. G. Poltavtsev and A. S. Knyazev, Technology of Surface Treatment in Microelectronics (Tekhnika, Kiev, 1990) [in Russian].

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Orion Research and Production Association, Moscow, 111538, Russia

    A. Yu. Borovkova, T. N. Grischina & E. S. Matyuhina

Authors
  1. A. Yu. Borovkova
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. T. N. Grischina
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. E. S. Matyuhina
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to T. N. Grischina.

Additional information

Original Russian Text © A.Yu. Borovkova, T.N. Grischina, E.S. Matyuhina, 2017, published in Prikladnaya Fizika, 2017, No. 2, pp. 47–49.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Borovkova, A.Y., Grischina, T.N. & Matyuhina, E.S. Precision Etching of Thin Doped Silicon Layers. J. Commun. Technol. Electron. 63, 303–305 (2018). https://doi.org/10.1134/S1064226918030038

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1064226918030038

Keywords

Search

Navigation