Abstract
Solar-blind UV photodetectors based on photocathodes are among the important applications of heterostructures based on group III metal nitride semiconductors. Related investigations are most frequently devoted to photocathodes with p-GaN active regions characterized by a long-wavelength sensitivity threshold at 360 nm. Since the detected radiation is mostly concentrated in the spectral range below 240–290 nm, corresponding displacement of the long-wavelength sensitivity threshold of photodetectors by using photocathodes with p-AlGaN active regions is a topical task. We present preliminary results on manufacturing photocathodes with a p-Al x Ga1 − x N (x = 0.1 and 0.3) active region (possessing a long-wavelength sensitivity threshold at 330 and 300 nm, respectively).
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Original Russian Text © M.R. Ainbund, A.N. Alekseev, O.V. Alymov, V.N. Jmerik, L.V. Lapushkina, A.M. Mizerov, S.V. Ivanov, A.V. Pashuk, S.I. Petrov, 2012, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 38, No. 9, pp. 88–95.
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Ainbund, M.R., Alekseev, A.N., Alymov, O.V. et al. Solar-blind UV photocathodes based on AlGaN heterostructures with a 300- to 330-nm spectral sensitivity threshold. Tech. Phys. Lett. 38, 439–442 (2012). https://doi.org/10.1134/S1063785012050033
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DOI: https://doi.org/10.1134/S1063785012050033