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Semiconductor properties of nanocrystalline diamond electrodes

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Abstract

The semiconductor properties of nitrogenated nanocrystalline diamond electrodes and their corrosion transformations caused by electrochemical experiment in indifferent electrolyte (1 M K2SO4) were studied by the electrochemical impedance spectroscopy method. It was shown that after electrochemical measurements a narrow diamond peak at 1335.7 cm−1 appears in the Raman spectrum; formerly the peak was hidden at a background of the intense signal inherent to graphite-like carbon. It was suggested that the corrosion damage caused by the exposure to electrochemical experiment resulted in a decrease of relative amount of nondiamond (graphite-like) carbon in the subsurface layer in the nanocrystalline diamond. By using Mott-Schottky plots, the nanocrystalline diamond was shown having n-type conductance. Within the bounds of the “effective medium” approach, the nanocrystalline diamond’s flat-band potential in aqueous solution and the noncompensated donor apparent concentration were estimated.

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Authors and Affiliations

  1. Frumkin Institute of Physical Chemistry and Electrochemistry, Russian Academy of Sciences, Leninskii pr. 31, Moscow, 119071, Russia

    M. D. Krotova & Yu. V. Pleskov

  2. Prokhorov General Physics Institute, Russian Academy of Sciences, ul. Vavilova 38, 119991, Moscow, Moscow, Russia

    A. A. Khomich, V. G. Ralchenko & D. N. Sovyk

  3. Keldysh Research Center, Moscow, Russia

    V. A. Kazakov

Authors
  1. M. D. Krotova
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  2. Yu. V. Pleskov
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  3. A. A. Khomich
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  4. V. G. Ralchenko
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  5. D. N. Sovyk
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  6. V. A. Kazakov
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Corresponding author

Correspondence to Yu. V. Pleskov.

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Original Russian Text © M.D. Krotova, Yu.V. Pleskov, A.A. Khomich, V.G. Ralchenko, D.N. Sovyk, V.A. Kazakov, 2014, published in Elektrokhimiya, 2014, Vol. 50, No. 2, pp. 115–121.

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Krotova, M.D., Pleskov, Y.V., Khomich, A.A. et al. Semiconductor properties of nanocrystalline diamond electrodes. Russ J Electrochem 50, 101–107 (2014). https://doi.org/10.1134/S1023193514020013

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  • DOI: https://doi.org/10.1134/S1023193514020013

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