Abstract
The electrical and optical properties of light-emitting devices with an active region containing several layers of InGaN/GaN quantum dots (QDs) separated by GaN spacers are studied. It is shown that the overgrowth of the QD layer with an InGaN layer that has a reduced In content at higher temperatures raises the confinement energy of carriers in QDs. Furthermore, inhomogeneous carrier injection, predominantly into regions with higher confinement energy, is observed. The electrical and optical properties of p-n junctions and the effect of the inhomogeneities on these properties are studied in detail. It is shown that the shifts of photoluminescence and electroluminescence lines, which are observed when changing the experimental conditions, are related to these properties of the inhomogeneities in the p-n junction.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 2, 2005, pp. 264–268.
Original Russian Text Copyright © 2005 by D. Sizov, V. Sizov, Zavarin, Lundin, Fomin, Tsatsul’nikov, Ledentsov.
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Sizov, D.S., Sizov, V.S., Zavarin, E.E. et al. Kinetics and inhomogeneous carrier injection in InGaN nanolayers. Semiconductors 39, 249–253 (2005). https://doi.org/10.1134/1.1864208
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DOI: https://doi.org/10.1134/1.1864208