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Measurements of parameters of the low-temperature molecular-beam epitaxy of GaAs

  • Atomic Structure and Nonelectronic Properties of Semiconductors
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Abstract

Phase diagrams of GaAs (001) surface structures were used to calibrate sensors of the substrate temperature and As flux in molecular-beam epitaxy systems. The sublimation temperature of amorphous layers of As adsorbed on GaAs was measured. It was shown that this temperature is constant and does not depend on the rate of substrate heating, layer thickness, or the degree of vacuum in the system. The sublimation temperature of amorphous As can be used as a reference point to calibrate the substrate temperature in the range of low growth temperatures.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia

    V. V. Preobrazhenskii, M. A. Putyato & B. R. Semyagin

Authors
  1. V. V. Preobrazhenskii
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  2. M. A. Putyato
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  3. B. R. Semyagin
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 36, No. 8, 2002, pp. 897–901.

Original Russian Text Copyright © 2002 by Preobrazhenski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Putyato, Semyagin.

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Preobrazhenskii, V.V., Putyato, M.A. & Semyagin, B.R. Measurements of parameters of the low-temperature molecular-beam epitaxy of GaAs. Semiconductors 36, 837–840 (2002). https://doi.org/10.1134/1.1500455

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  • DOI: https://doi.org/10.1134/1.1500455

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