Abstract
Heterostructures with InGaNAs quantum wells (QWs) that contain InAs monolayer insertions and are confined between InGaNAs/GaNAs superlattices, grown on GaAs substrates by molecular-beam epitaxy, have been studied. At high indium concentrations, a transition from the two dimensional to island growth mode was observed, which was caused by an increase in the mismatch strain. The longest emission wavelength achieved at room temperature was 1.59 μm in structures with QWs and 1.76 μm in those with quantum dots (QDs).
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Original Russian Text © V.S. Mikhrin, A.P. Vasil’ev, E.S. Semenova, N.V. Kryzhanovskaya, A.G. Gladyshev, Yu.G. Musikhin, A.Yu. Egorov, A.E. Zhukov, V.M. Ustinov, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 3, pp. 347–350.
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Mikhrin, V.S., Vasil’ev, A.P., Semenova, E.S. et al. InAs/InGaNAs/GaNAs QW and QD heterostructures emitting at 1.4–1.8 μm. Semiconductors 40, 342–345 (2006). https://doi.org/10.1134/S106378260603016X
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DOI: https://doi.org/10.1134/S106378260603016X