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Effect of Growth Temperature on Physical Properties of MoS2 Thin Films Synthesized by CVD

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Abstract

Due to the application of two-dimensional crystals in different fields, high-quality growth of these materials has attracted more attention from researchers. High-quality monolayer MoS2 with single crystals up to 20 microns in size has been formed on Si substrate by the chemical vapor deposition method. A comprehensive study was carried out on the prepared MoS2 thin films using optical microscopy, atomic force microscopy, x-ray diffraction (XRD) analysis, and Raman spectroscopy. It was concluded that the growth temperature affected the morphology and structure of the synthesized MoS2 sheets. The XRD spectra confirmed that the peak intensity and resolution were highly dependent on the growth temperature. Raman spectroscopy showed that monolayer MoS2 was grown on the silicon substrate at higher temperature, as proved by the Raman frequency difference (∼ 19 cm−1) between two characteristic modes (\( {\hbox{E}}^{1}_{{2{\rm{g}}}} \) and A1g). Atomic force micrographs of the films showed the evolution of the surface morphology as a function of the growth temperature.

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Acknowledgments

This research work was supported by the Department of Physics Science and Research Branch, Islamic Azad University, Tehran, Iran.

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Authors and Affiliations

  1. Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, PO Box 14665-679, Tehran, Iran

    Mahnoosh Ardahe, Mohammad Reza Hantehzadeh & Mahmood Ghoranneviss

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  1. Mahnoosh Ardahe
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  2. Mohammad Reza Hantehzadeh
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  3. Mahmood Ghoranneviss
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Correspondence to Mohammad Reza Hantehzadeh.

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Ardahe, M., Hantehzadeh, M.R. & Ghoranneviss, M. Effect of Growth Temperature on Physical Properties of MoS2 Thin Films Synthesized by CVD. J. Electron. Mater. 49, 1002–1008 (2020). https://doi.org/10.1007/s11664-019-07796-1

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