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Microstructural and electrical characterizations of transparent Er-doped ZnO nano thin films prepared by sol–gel process

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Abstract

In this study, rare earth element (Er) doped ZnO nano thin films which have dual structure of (Zn1−xErx)O (x = 0.0, 0.01, 0.02, 0.03, 0.04 and 0.05) are prepared by using sol–gel method. The microstructure and electrical properties of prepared nano thin films are investigated. Nano thin films are coated on the glass substrate by using the dip coating method. The films are annealed at 600 °C for 30 min. The X-ray diffractometer (XRD), scanning electron microscopy and atomic force microscopy are used to determine the structural properties such as crystal structures, grain sizes, surface morphology; Hall effect measurements system is used to investigate the electrical properties of materials. XRD results showed that all Er doped nano thin films have a hexagonal structure and (002) orientation. Surface morphologies of ZnErO thin films are denser and more uniform than the undoped ZnO thin film. According to the Hall effect measurements, the resistivity of the films decreased with increasing Er concentration from \(0\) to \(4\%\) and then slightly increased at \(5\% Er\).

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Acknowledgements

The authors would like to thank the Kastamonu University Scientific Research Projects Coordination Department under the Grant No. KUBAP-03/2013-41, Grant No. KUBAP-05/2015-12 and the Scientific and Technological Research Council of Turkey (TUBITAK) Project No. 114F259 for the supports.

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Authors and Affiliations

  1. Department of Materials Science and Nanotechnology Engineering, Faculty of Engineering and Architecture, Kastamonu University, 37100, Kastamonu, Turkey

    E. Asikuzun

  2. Department of Physics, Faculty of Arts and Sciences, Kastamonu University, 37100, Kastamonu, Turkey

    O. Ozturk

  3. Research and Application Center, Kastamonu University, 37100, Kastamonu, Turkey

    E. Asikuzun & O. Ozturk

  4. Department of Mechatronics Engineering, Faculty of Engineering and Natural Sciences, Bahcesehir University, 34349, Besiktas, Istanbul, Turkey

    L. Arda

  5. Department of Physics, Faculty of Arts and Sciences, Abant Izzet Baysal University, 14280, Bolu, Turkey

    E. Asikuzun & C. Terzioglu

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  1. E. Asikuzun
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  2. O. Ozturk
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  3. L. Arda
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  4. C. Terzioglu
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Correspondence to E. Asikuzun.

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Asikuzun, E., Ozturk, O., Arda, L. et al. Microstructural and electrical characterizations of transparent Er-doped ZnO nano thin films prepared by sol–gel process. J Mater Sci: Mater Electron 28, 14314–14322 (2017). https://doi.org/10.1007/s10854-017-7291-x

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  • DOI: https://doi.org/10.1007/s10854-017-7291-x

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