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Electrical properties of Si doped Ga2O3 films grown by pulsed laser deposition

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Abstract

In order to investigate Si doping effect on the structure and properties of Ga2O3 thin films, films with different Si content were grown by pulsed laser deposition (PLD) on sapphire substrates at 500 °C. Carrier density of 9.1 × 1019 cm−3 and conductivity of 2.0 S cm−1 have been observed for 1.1 at.% Si-doped film. Further increase of the Si content leads to the decrease of the carrier density. Atomic force microscope and spectrophotometer show that the obtained films have very smooth surface and high transmittance. X-ray diffraction reveals that films with Si content lower than 4.1 at.% are of high (-201) oriented monoclinic structure. Our work shows that PLD is ideal candidate for growing conductive Si-doped β-Ga2O3 films.

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References

  1. B.E. Gaddy, Z. Bryan, I. Bryan, J. Xie, R. Dalmau, B. Moody, Y. Kumagai, T. Nagashima, Y. Kubota, T. Kinoshita, A. Koukitu, R. Kirste, Z. Sitar, R. Collazo, D.L. Irving, Appl. Phys. Lett. 104, 202106 (2014)

    Article  Google Scholar 

  2. H. Aida, K. Nishiguchi, H. Takeda, N. Aota, K. Sunakawa, Y. Yaguchi, Jpn. J. Appl. Phys. 47, 8506 (2008)

    Article  Google Scholar 

  3. Y. Tomm, P. Reiche, D. Klimm, T. Fukuda, J. Cryst. Growth 220, 510 (2000)

    Article  Google Scholar 

  4. N. Ueda, H. Hosono, R. Waseda, H. Kawazoe, Appl. Phys. Lett. 70, 3561 (1997)

    Article  Google Scholar 

  5. E.G. Víllora, K. Shimamura, Y. Yoshikawa, T. Ujiie, K. Aoki, Appl. Phys. Lett. 92, 202120 (2008)

    Article  Google Scholar 

  6. Y. Tomm, J.M. Ko, A. Yoshikawa, T. Fukuda, Sol. Energy Mater. Sol. C 66, 369 (2001)

    Article  Google Scholar 

  7. S.-A. Lee, J.-Y. Hwang, J.-P. Kim, S.-Y. Jeong, C.-R. Cho, Appl. Phys. Lett. 89, 182906 (2006)

    Article  Google Scholar 

  8. Y. Oshima, E.G. Vίllora, K. Shimamura, J. Cryst. Growth 410(53), 53 (2015)

    Article  Google Scholar 

  9. S. Nakagomi, Y. Kokubun, J. Cryst. Growth 349, 12 (2012)

    Article  Google Scholar 

  10. P. Guo, J. Xiong, X. Zhao, T. Sheng, C. Yue, B. Tao, X. Liu, J. Mater. Sci. Mater. Electron. 25, 3629 (2014)

    Article  Google Scholar 

  11. Y. Cheng, K. Yang, Y. Peng, Y. Yin, J. Chen, B. Jing, H. Liang, G. Du, J. Mater. Sci. Mater. Electron. 24, 5122 (2013)

    Article  Google Scholar 

  12. D. Shinohara, S. Fujita, Jpn. J. Appl. Phys. 47, 7311 (2008)

    Article  Google Scholar 

  13. N. Suzuki, K. Kaneko, S. Fujita, J. Cryst. Growth 401, 670 (2014)

    Article  Google Scholar 

  14. F. Zhang, K. Saito, T. Tanaka, M. Nishio, Q. Guo, Solid State Commun. 186, 28 (2014)

    Article  Google Scholar 

  15. Y. Kokubun, T. Abe, S. Nakagomi, Phys. Status Solidi (a) 207, 1741 (2010)

    Article  Google Scholar 

  16. F. Zhang, K. Saito, T. Tanaka, M. Nishio, M. Arita, Q. Guo, Appl. Phys. Lett. 105, 162107 (2014)

    Article  Google Scholar 

  17. S.M. Sze, K.K. Ng, Physics of semiconductor devices (Wiley, New Jersey, 2006), p. 369

    Book  Google Scholar 

  18. M. Orita, H. Ohta, M. Hirano, H. Hosono, Appl. Phys. Lett. 77, 4166 (2000)

    Article  Google Scholar 

  19. M. Orita, H. Hiramatsu, H. Ohta, M. Hirano, H. Hosono, Thin Solid Films 411, 134 (2002)

    Article  Google Scholar 

  20. J.B. Varley, J.R. Weber, A. Janotti, C.G. Van de Walle, Appl. Phys. Lett. 97, 142106 (2010)

    Article  Google Scholar 

  21. K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, S. Yamakoshi, Appl. Phys. Express 6, 086502 (2013)

    Article  Google Scholar 

  22. D. Gogova, G. Wagner, M. Baldini, M. Schmidbauer, K. Irmscher, R. Schewski, Z. Galazka, M. Albrecht, R. Fornari, J. Cryst. Growth 401, 665 (2014)

    Article  Google Scholar 

  23. K. Takakura, S. Funasaki, I. Tsunoda, H. Ohyama, D. Takeuchi, T. Nakashima, M. Shibuya, K. Murakami, E. Simoen, C. Claeys, Phys. B 407, 2900 (2012)

    Article  Google Scholar 

  24. S. Müller, H. von Wenckstern, D. Splith, F. Schmidt, M. Grundmann, Phys. Status Solidi A 211, 34 (2014)

    Article  Google Scholar 

  25. H. Hosono, M. Yasukawa, H. Kawazoe, J. Non-cryst. Solids 203, 334 (1996)

    Article  Google Scholar 

  26. H.Q. Chiang, J.F. Wager, R.L. Hoffman, J. Jeong, D.A. Keszler, Appl. Phys. Lett. 86, 013503 (2005)

    Article  Google Scholar 

  27. T. Oshima, T. Okuno, S. Fujita, Jpn. J. Appl. Phys. 46, 7217 (2007)

    Article  Google Scholar 

  28. F.B. Zhang, K. Saito, T. Tanaka, M. Nishio, Q.X. Guo, J. Cryst. Growth 387, 96 (2014)

    Article  Google Scholar 

  29. K. Takakura, D. Koga, H. Ohyama, J.M. Rafi, Y. Kayamoto, M. Shibuya, H. Yamamoto, J. Vanhellemont, Phys. B 404, 4854 (2009)

    Article  Google Scholar 

  30. K. Irmscher, Z. Galazka, M. Pietsch, R. Uecker, R. Fornari, J. Appl. Phys. 110, 063720 (2011)

    Article  Google Scholar 

  31. A. Gupta, J. Appl. Phys. 73, 7877 (1993)

    Article  Google Scholar 

  32. M. Hiratani, K. Imagawa, K. Takagi, J. Appl. Phys. 78, 4258 (1995)

    Article  Google Scholar 

  33. P. Kozodoy, H. Xing, S.P. DenBaars, U.K. Mishra, A. Saxler, R. Perrin, S. Elhamri, W.C. Mitchel, J. Appl. Phys. 87, 1832 (2000)

    Article  Google Scholar 

  34. T. Zacherle, P.C. Schmidt, M. Martin, Phys. Rev. B 87, 235206 (2013)

    Article  Google Scholar 

  35. J.B. Varley, H. Peelaers, A. Janotti, C.G. Van de Walle, J. Phys. Condens. Matter 23, 334212 (2011)

    Article  Google Scholar 

  36. E. Korhonen, F. Tuomisto, D. Gogova, G. Wagner, M. Baldini, Z. Galazka, R. Schewski, M. Albrecht, Appl. Phys. Lett. 106, 242103 (2015)

    Article  Google Scholar 

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Acknowledgments

The authors would like to thank Yuuki Okano for RHEED measurements. This work was partially supported by the Partnership Project for Fundamental Technology Researches of Ministry of Education, Culture, Sports, Science and Technology, Japan.

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Authors and Affiliations

  1. Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga, 840-8502, Japan

    Fabi Zhang, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio & Qixin Guo

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  1. Fabi Zhang
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  2. Katsuhiko Saito
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  3. Tooru Tanaka
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  4. Mitsuhiro Nishio
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  5. Qixin Guo
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Correspondence to Qixin Guo.

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Zhang, F., Saito, K., Tanaka, T. et al. Electrical properties of Si doped Ga2O3 films grown by pulsed laser deposition. J Mater Sci: Mater Electron 26, 9624–9629 (2015). https://doi.org/10.1007/s10854-015-3627-6

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  • DOI: https://doi.org/10.1007/s10854-015-3627-6

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