Skip to main content
SpringerLink
Log in

Growth characteristics and device properties of MOD derived β-Ga2O3 films

  • Published:
Journal of Materials Science: Materials in Electronics Aims and scope Submit manuscript

Abstract

β-Ga2O3 films prepared by metal organic deposition (MOD) on (000l) sapphire substrates, have been developed for ultraviolet photodectors. The structural, surface, optical properties of MOD derived β-Ga2O3 films depending on growth temperatures were investigated. As growth temperature increased, the crystallinity of β-Ga2O3 films enhanced, crystallite size and surface roughness increased. The optical band gap of β-Ga2O3 films maintained within 4.8–4.9 eV at different growth temperatures. Metal–semiconductor–metal ultraviolet photodetectors based on MOD derived β-Ga2O3 films were successfully fabricated, demonstrating the responsivity of 0.76 A/W at 20 V and the upper limits of the rise and decay time of 50 and 30 ms, respectively, indicating a promising low-cost approach for Ga2O3-base photoelectronics applications.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5

Similar content being viewed by others

References

  1. J.B. Varley, J.R. Weber, A. Janotti, C.G. Van de Walle, Appl. Phys. Lett. 97, 142106 (2010)

    Article  Google Scholar 

  2. P.D.C. King, I. McKenzie, T.D. Veal, Appl. Phys. Lett. 96, 062110 (2010)

    Article  Google Scholar 

  3. R. Suzuki, S. Nakagomi, Y. Kokubun, N. Arai, S. Ohira, Appl. Phys. Lett. 94, 222102 (2009)

    Article  Google Scholar 

  4. T. Oshima, T. Okuno, N. Arai, N. Suzuki, S. Ohira, S. Fujita, Appl. Phys. Express 1, 011202 (2008)

    Article  Google Scholar 

  5. Y. Kokubun, K. Miura, F. Endo, S. Nakagomi, Appl. Phys. Lett. 90, 031912 (2007)

    Article  Google Scholar 

  6. T. Oshima, T. Okuno, S. Fujita, Jpn. J. Appl. Phys. 46, 7217 (2007)

    Article  Google Scholar 

  7. P. Feng, J.Y. Zhang, Q.H. Li, T.H. Wang, Appl. Phys. Lett. 88, 153107 (2006)

    Article  Google Scholar 

  8. Y.B. Li, T. Tokizono, M.Y. Liao, M. Zhong, Y. Koide, I. Yamada et al., Adv. Funct. Mater. 20, 3972 (2010)

    Article  Google Scholar 

  9. D.S. Wuu, S.L. Ou, R.H. Horng, P. Ravadgar, T.Y. Wang, H.Y. Lee, Proc. SPIE 8263, 826317 (2012)

    Article  Google Scholar 

  10. Y. Cheng, K. Yang, Y. Peng, Y. Yin, J.X. Chen, H.W. Liang et al., J. Mater. Sci. Mater. Electron. 24, 5122 (2013)

    Article  Google Scholar 

  11. J.H. Kim, K.H. Yoon, J. Mater. Sci. Mater. Electron. 20, 879 (2009)

    Article  Google Scholar 

  12. R.W. Schwartz, Chem. Mater. 9, 2325 (1997)

    Article  Google Scholar 

  13. M.S. Bhuiyan, M. Paranthaman, K. Salama, Supercond. Sci. Technol. 19, R1 (2006)

    Article  Google Scholar 

  14. K. Al-Khamis, Z.A. Al-Othman, Prog. React. Kinet. Mech. 35, 187 (2010)

    Article  Google Scholar 

  15. W.T. Lim, C.H. Lee, Thin Solid Films 353, 12 (1999)

    Article  Google Scholar 

  16. K. Prabakar, S. Venkatachalam, Y.L. Jeyachandran, Sa.K. Narayandass, D. Mangalaraj, Mater. Sci. Eng. B 107, 99 (2004)

    Article  Google Scholar 

  17. E. Monroy, F. Omnes, F. Calle, Semicond. Sci. Technol. 18, R33 (2003)

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, People’s Republic of China

    Pei Guo, Jie Xiong, Xiaohui Zhao, Tuo Sheng, Chao Yue, Bowan Tao & Xingzhao Liu

Authors
  1. Pei Guo
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Jie Xiong
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Xiaohui Zhao
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Tuo Sheng
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Chao Yue
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Bowan Tao
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. Xingzhao Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding authors

Correspondence to Jie Xiong or Xingzhao Liu.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Guo, P., Xiong, J., Zhao, X. et al. Growth characteristics and device properties of MOD derived β-Ga2O3 films. J Mater Sci: Mater Electron 25, 3629–3632 (2014). https://doi.org/10.1007/s10854-014-2066-0

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10854-014-2066-0

Keywords

Search

Navigation