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Dynamic Polarization and Relaxation of 75As Nuclei in Silicon at High Magnetic Field and Low Temperature

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Abstract

We present the results of experiments on dynamic nuclear polarization and relaxation of 75As in silicon crystals. Experiments are performed in strong magnetic fields of 4.6 T and temperatures below 1 K. At these conditions donor electron spins are fully polarized, and the allowed and forbidden electron spin resonance transitions are well resolved. We demonstrate effective nuclear polarization of 75As nuclei via the Overhauser effect on the time scale of several hundred seconds. Excitation of the forbidden transitions leads to a polarization through the solid effect. The relaxation rate of donor nuclei has strong temperature dependence characteristic of Orbach process.

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Acknowledgements

We acknowledge the funding from the Wihuri Foundation and the Academy of Finland Grants Nos. 260531 and 268745. S. S. thanks UTUG for support. L. V. acknowledges partial support of the Government of Russia, Project No. 14.Z50.31.0021.

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Authors and Affiliations

  1. Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, 20014, Turku, Finland

    J. Järvinen, J. Ahokas, S. Sheludiakov, O. Vainio, D. Zvezdov, L. Lehtonen & S. Vasiliev

  2. Ioffe Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    L. Vlasenko

  3. Institute of Physics, Kazan Federal University, Kazan, 420008, Russia

    D. Zvezdov

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  1. J. Järvinen
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  2. J. Ahokas
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  6. L. Lehtonen
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  7. L. Vlasenko
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  8. S. Vasiliev
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Correspondence to J. Järvinen.

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Järvinen, J., Ahokas, J., Sheludiakov, S. et al. Dynamic Polarization and Relaxation of 75As Nuclei in Silicon at High Magnetic Field and Low Temperature. Appl Magn Reson 48, 473–483 (2017). https://doi.org/10.1007/s00723-017-0875-z

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  • DOI: https://doi.org/10.1007/s00723-017-0875-z

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