Abstract
Single pulse laser ablation of GaAs and InP using 130 fs light pulses at ≈800 nm was studied with various techniques, in particular, scanning and transmission electron microscopies. The final state of the material near the laser-ablated region following femtosecond ablation was characterized in detail for selected laser fluences. Threshold ablation laser fluences were also obtained for both compounds.
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61.80.Ba; 64.60.-i; 79.20.Ds
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Borowiec , A., MacKenzie , M., Weatherly , G. et al. Femtosecond laser pulse ablation of GaAs and InP: studies utilizing scanning and transmission electron microscopy. Appl Phys A 77, 411–417 (2003). https://doi.org/10.1007/s00339-002-1949-8
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DOI: https://doi.org/10.1007/s00339-002-1949-8