LiMn₂O₄ films grown by pulsed-laser deposition

Abstract

LiMn₂O₄ films have been deposited onto silicon wafer by pulsed-laser deposition (PLD) technique in order to test their reliability as cathode materials in rechargeable lithium microbatteries. The film formation has been studied as a function of the preparation conditions, i.e., composition of the target, substrate temperature, and oxygen partial pressure in the deposition chamber. Depending on the conditions of deposition, Mn₂O₃ was present as an impurity phase. When deposited onto silicon substrate maintained at 300 °C in an oxygen pressure of 100 mTorr from the target LiMn₂O₄+15 % Li₂O, the PLD films are well-textured with crystallite size of 300 nm. It is found that such a film crystallizes in the spinel structure (Fd3m symmetry) as evidenced by x-ray diffraction and Raman scattering measurements. Surface morphologies of layers were investigated by SEM. The cells Li//LiMn₂O₄ have been tested by cyclic voltammetry and galvanostatic charge-discharge techniques in the range 3.0–4.2 V. The voltage profiles show the two expected steps for Li_xMn₂O₄ with a specific capacity as high as 120 mC/cm² µm. The chemical diffusion coefficients for the Li_xMn₂O₄ thin films appear to be in the range of 10⁻¹¹-10⁻¹² cm²/s.