Skip to main content
SpringerLink
Log in

Experimental evidence for GaAs surface quality affecting ohmic contact properties

  • Letter Papers
  • Published:
Applied physics Aims and scope Submit manuscript

Abstract

An experimental study is described of barrier heights at the junction between (111) faces of semiconductingn-type bulk GaAs and alloyed In−Ge−Ag metal contacts. It is observed that strong corrugation of the semiconducting surface causes the barrier height to be higher than that of flat surfaces.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. H. Hartnagel, B. L. Weiss: J. Mat. Sci.8, 1061 (1973)

    Article  Google Scholar 

  2. W. Tantraporn: J. Appl. Phys.41, 4669 (1970)

    Article  ADS  Google Scholar 

  3. F. A. Padovani: InSemiconductors and Semimetals, Vol.7, ed. by Willardson, R. K., and Beer, A. C.: (Academic Press, New York 1971)

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Electrical and Electronic Engineering, The University, NEI 7RU, Newcastle upon Tyne, UK

    H. Paria & H. Hartnagel

Authors
  1. H. Paria
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. H. Hartnagel
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Paria, H., Hartnagel, H. Experimental evidence for GaAs surface quality affecting ohmic contact properties. Appl. Phys. 10, 97–99 (1976). https://doi.org/10.1007/BF00929535

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00929535

PACS Codes

Search

Navigation