Abstract
A novel low cost process for texturing the diamond wire sawn (DWS) multi-crystalline silicon (mc-Si) wafers is demonstrated. The proposed scheme does not use any additives or metals and can be integrated into any standard industrial acid texturing tool. This process can be carried out at temperature ranges from 13–17 °C, which is normally higher than the temperature used for the conventional acid texturization process and thus making the process energy efficient. In this work, authors use HF rich acid solution for the generation of the porous silicon (Por-Si) layer, it is then followed by Por-Si dilution in an alkali solution. Process generates less porous, inverted rounded structures on the mc-Si wafer surfaces with excellent light trapping properties. Textured surfaces yield weighted average reflectance of 22.5% combined with a minority carrier lifetime up to 60 μs.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Similar content being viewed by others
References
N. Watanabe, Y. Kondo, D. Ide, T. Matsuki, H. Takato, I. Sakata, Characterization of polycrystalline silicon wafers for solar cells sliced with novel fixed-abrasive wire. Prog. Photovoltaics Res. Appl. 18(7), 485–490 (2010)
B. Meinel, T. Koschwitz, J. Acker, Textural development of SiC and diamond wire sawed sc-silicon wafer. Energy Procedia 27, 330–336 (2012)
B. Meinel, T. Koschwitz, C. Blocks, J. Acker, Comparison of diamond wire cut and silicon carbide slurry processed silicon wafer surfaces after acidic texturisation. Mater. Sci. Semicond. Process. 26, 93–100 (2014)
P.K. Basu, K.P. Sreejith, Indian patent application no. 201721022615
M. Lippold, F. Buchholz, C. Gondek, F. Honeit, E. Wefringhaus, E. Kroke, Texturing of SiC-slurry and diamond wire sawn silicon wafers by HF–HNO3–H2SO4 mixtures. Sol. Energy Mater. Sol. Cells 127, 104–111 (2014)
A. Kumagai, Texturization using metal catalyst wet chemical etching for multicrystalline diamond wire sawn wafer. Sol. Energy Mater. Sol. Cells 133, 216–222 (2015)
Acknowledgements
This work was carried out at the National Centre for Photovoltaic Research and Education (funded by the Ministry of New and Renewable Energy, Government of India) under the project no. 16MNRE002 at IIT Bombay.
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2019 Springer Nature Switzerland AG
About this paper
Cite this paper
Sreejith, K.P., Kumbhar, S., Sharma, A.K., Kottantharayil, A., Basu, P.K. (2019). A New Additive-free Industrial Chemical Texturing Process for Diamond Wire Sawn mc-Si Wafers. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_48
Download citation
DOI: https://doi.org/10.1007/978-3-319-97604-4_48
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-97603-7
Online ISBN: 978-3-319-97604-4
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)