Abstract
As the substrate of photovoltaic solar cells, multi-crystalline silicon (mc-Si) wafers cut by diamond wire saw are less effective in commercial acid texturing, due to the saw marks and amorphous silicon layer on the as-sawn wafer surface. This paper proposes to wet sandblasting process for surface modification of diamond wire sawn mc-Si wafers before acid texturing to solve this problem. The effect of wet sandblasting modification on the surface morphology of mc-Si wafers was analyzed, as well as the surface morphology and anti-reflection performance of mc-Si wafers after wet acid etching were studied. The results show that the saw marks and amorphous silicon layer on the surface of as-sawn mc-Si wafer can be effectively removed by wet sandblasting with appropriate processing parameters. The reflectivity of pretreated mc-Si wafers after acid texturing is significantly lower than that of the unpretreated ones, which can meet the production requirements of solar photovoltaic cells. The research results provide a research idea to promote the effective combination of diamond wire saw slicing mc-Si and commercial acid texturing process.
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The work is financially supported by the National Natural Science Foundation of China (No. 51875322), and Key Research and Development Program of Shandong Province, China (No. 2020CXGC011003).
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RL: methodology, writing—original draft preparation, data curation, visualization. YG: conceptualization, methodology, Writing—review & editing, project administration, funding acquisition, supervision. CY: methodology.
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Liu, R., Gao, Y. & Yang, C. Wet sandblasting pretreatment of diamond wire sawn multi-crystalline silicon wafer for surface acid texturization in photovoltaics. J Mater Sci: Mater Electron 33, 3676–3686 (2022). https://doi.org/10.1007/s10854-021-07561-3
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DOI: https://doi.org/10.1007/s10854-021-07561-3