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Physical Properties of AlGaN/GaN Heterostructures Grown on Vicinal Substrates

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Abstract

We report on the growth of Al0.25Ga0.75N/GaN heterostructures grown on low dislocation density vicinal surfaces of semi-insulating c-axis GaN substrates. Atomic force microscopy (AFM), photoluminescence (PL), cathodoluminescence (CL), high-resolution x-ray diffraction (HRXRD), secondary-ion mass spectroscopy (SIMS), Hall effect, and Raman spectroscopy have been used to assess structural and electrical properties as a function of substrate offcut. Bulk GaN substrates with vicinal offcut between 0.5° and 1.4° are optimal with respect to surface roughness and dopant incorporation. AFM, PL, and CL show decreasing Mg incorporation with increasing offcut angle. Raman spectroscopy, used to analyze biaxial strain, confirms essentially strain-free heterostructure growth on vicinal substrates with offcut angles between 0.5° and 1.4° off [0001] toward \( [1\overline{1} 00] \). Aluminum (Al) incorporation in the Al x Ga1−x N barrier assessed by Raman vibration is in excellent agreement with trends found by HRXRD.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, North Carolina State University, Box 7919 , Raleigh, NC, 27695, USA

    J. A. Grenko, C. L. Reynolds Jr., D. W. Barlage & M. A. L. Johnson

  2. Department of Chemistry, North Carolina State University, Raleigh, NC, 27695, USA

    S. E. Lappi

  3. Veeco Turbodisc, 392 Elizabeth Avenue, Sommerset, NJ, 08873, USA

    C. W. Ebert

  4. Kyma Technologies, 8829 Midway West Road, Raleigh, NC, 27617, USA

    E. A. Preble, T. Paskova & K. R. Evans

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Grenko, J.A., Reynolds, C.L., Barlage, D.W. et al. Physical Properties of AlGaN/GaN Heterostructures Grown on Vicinal Substrates. J. Electron. Mater. 39, 504–516 (2010). https://doi.org/10.1007/s11664-010-1153-0

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