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The effect of growth temperature on structural quality of AlInGaN/AlN/GaN heterostructures grown by MOCVD

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Abstract

In this paper, the influence of the growth temperature on the structural quality of AlInGaN epilayer on the GaN/sapphire substrate grown by metal–organic chemical vapor deposition has been studied. The AlInGaN epilayers has been characterized by high-resolution X-ray diffractometer, atomic force microscopy, photoluminescence spectra and Raman scattering spectrometer. The growth temperature is believed to have a direct influence on the quality of the AlInGaN epilayer. Upon optimizing the growth temperature, at 890 °C a high crystalline quality with a full width at half maxima for the (0004) and (10–15) planes are 312 and 618 arc-sec, respectively has been achieved. It has been found that the number of V-defect pits at high growth temperature can be minimized. The AlInGaN also revealed atomic level step with a root mean square roughness of 0.13 nm. Other than the AlInGaN related room temperature photoluminescence peak, two emissions originate from InGaN-like clusters and the AlInGaN random matrix, respectively. In the Raman spectra, the mode at 748 cm−1 is attributed to the A1 (LO) mode of AlInGaN. The mode at 680 cm−1 is attributed to InGaN clustering and assigned as A1 (LO) mode.

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Acknowledgments

The authors gratefully acknowledge the financial support by the Department of Science and Technology (DST), India for providing MOCVD facility. The first author (Loganathan Ravi) would like to thank Anna University, Chennai, for the Anna Centenary Research Fellowship (ACRF) and acknowledges CSIR, Govt. of India for the award of Senior Research Fellowship (SRF).

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Authors and Affiliations

  1. Crystal Growth Centre, Anna University, Chennai, 600 025, India

    R. Loganathan, K. Prabakaran, R. Ramesh, M. Jayasakthi, P. Arivazhagan, Shubra Singh & K. Baskar

  2. National Centre for Nanoscience and Nanotechnology, University of Madras, Guindy Campus, Chennai, 600 025, India

    M. Balaji

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  1. R. Loganathan
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  2. M. Balaji
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  3. K. Prabakaran
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Loganathan, R., Balaji, M., Prabakaran, K. et al. The effect of growth temperature on structural quality of AlInGaN/AlN/GaN heterostructures grown by MOCVD. J Mater Sci: Mater Electron 26, 5373–5380 (2015). https://doi.org/10.1007/s10854-015-3082-4

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  • DOI: https://doi.org/10.1007/s10854-015-3082-4

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