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Exchange Bias Material: FeMn

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Handbook of Spintronics

Abstract

Since the exchange bias (EB) effect was discovered in the Co/CoO core-shell nanoparticles, it has been extensively studied in various ferromagnet/antiferromagnet material systems, both in experiments and in theory. Among many antiferromagnetic materials, metastable γ-FeMn emerges as the ideal material to reveal the physics mechanism behind the EB. In this chapter, the EB properties of FeMn-based bilayers are introduced by starting with the analysis of the spin configuration and structural and physical properties of bulk γ-FeMn, followed by the discussion of some basic features of the ferromagnetic/FeMn bilayers, such as the exchange field, the coercivity, the rotational hysteresis loss, and the blocking temperature as a function of the FeMn layer thickness, its crystalline microstructure, and temperature. Additionally, the thermal stability and training effect of the EB, the hysteretic effect of the angular dependent EB, and in particular the rotation of the pinning direction will be discussed in detail. The crucial role of the irreversible motion of FeMn spins will be analyzed as well.

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Abbreviations

ADEB:

Angular dependence of exchange bias

Δθ PD :

Angular change of pinning direction in the training effect

θ H :

Angle of the external magnetic field with respect to the initial pinning direction

AFM:

Antiferromagnet

t AFM :

AFM layer thickness

T B :

Blocking temperature

CW:

Clockwise

H C :

Coercivity

CCW:

Counterclockwise

t Cr :

Critical thickness of antiferromagnetic layer of the exchange bias onset

T C :

Curie temperature

n :

Cycle number of hysteresis loops in the training effect

EB:

Exchange bias

H E :

Exchange bias field

Δσ :

Exchange coupling energy

H :

External magnetic field

FM:

Ferromagnet

t FM :

Ferromagnetic layer thickness

M FM :

Ferromagnetic magnetization

GMR:

Giant magnetoresistance

m y :

Magnetic moment of ferromagnetic layer perpendicular to the external magnetic field

m x :

Magnetic moment of ferromagnetic layer parallel to the external magnetic field

MRAM:

Magnetoresistive random access memory

T :

Measurement temperature

T N :

Néel temperature

m AFM :

Net magnetic moment of the antiferromagnetic layer

θ PD :

Orientation of pinning direction

PD:

Pinning direction

W R :

Rotational hysteresis loss

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Further Reading

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  • Radu F, Zabel H (2008) Exchange bias effect of ferro-/antiferromagnetic heterostructures. Springer Tracts Modern Physics 227:97–184

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  • Iglesias O, Labarta A, Batlle X (2008) Exchange bias phenomenology and models of core/shell nanoparticles. J Nanosci Nanotechnol 8(6):2761–2780

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  • O’Grady K, Fernandez-Outon LE, Vallejo-Fernandez G (2010) A new paradigm for exchange bias in polycrystalline thin films. J Magn Magn Mater 322:883–899

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  • Giri S, Patra M, Majumdar S (2011) Exchange bias effect in alloys and compounds. J Phys Condens Matter 23(7):073201

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Authors and Affiliations

  1. School of Physics Science and Engineering, Tongji University, 200092, Shanghai, China

    Shiming Zhou

  2. Department of Mechanical Engineering and Texas Center for Superconductivity (TcSUH), University of Houston, Houston, TX, 77204, USA

    Li Sun

  3. National Laboratory of Solid State Microstructures, Nanjing University, 210093, Nanjing, China

    Jun Du

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  1. Shiming Zhou
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  2. Li Sun
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  3. Jun Du
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Correspondence to Shiming Zhou .

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Editors and Affiliations

  1. York-Nanjing International Center of Spintronics, Nanjing University, Nanjing, China

    Yongbing Xu

  2. Institute for Molecular Engineering, University of Chicago, Chicago, Illinois, USA

    David D. Awschalom

  3. Department of Materials Science, Graduate School of Engineering, Tohoku University, Sendai, Japan

    Junsaku Nitta

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Zhou, S., Sun, L., Du, J. (2016). Exchange Bias Material: FeMn. In: Xu, Y., Awschalom, D., Nitta, J. (eds) Handbook of Spintronics. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-6892-5_13

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