Volume 27, Issue 11

Search all Microsystem Technologies articles

November 2021

Special Issue On More Than Moore Microsystems

Issue Editors:

Jyotsna Kumar Mandal,
Sarkar Angsuman

20 articles in this issue

Preface
Jyotsna Kumar Mandal
Angsuman Sarkar
Editorial 23 October 2021 Pages: 3953 - 3953
Foreword: special issue on more than more microsystems
Bharat Bhushan
Editorial 15 October 2021 Pages: 3955 - 3955
Characterization and analysis of low-noise GaN-HEMT based inverter circuits
Sritoma Paul
Shubham Mondal
Angsuman Sarkar
Technical Paper 20 August 2019 Pages: 3957 - 3965
Effect of high-K dielectric on differential conductance and transconductance of ID-DG MOSFET following Ortiz-Conde model
Arpan Deyasi
Angsuman Sarkar
Anal Roy Chowdhury
Technical Paper 22 August 2019 Pages: 3967 - 3975
Performance analysis of gas sensing device and corresponding IoT framework in mines
Subhrapratim Nath
Anup Dey
Subir Kumar Sarkar
Technical Paper 30 September 2019 Pages: 3977 - 3985
Junctionless double gate non-parabolic variable barrier height Si-MOSFET for energy efficient application
Gargi Jana
Dipanjan Sen
Manash Chanda
Technical Paper 19 November 2019 Pages: 3987 - 3994
Drain current modelling of unipolar junction dual material double-gate MOSFET (UJDMDG) for SoC applications
A. Basak
M. Chanda
A. Sarkar
Technical Paper 20 November 2019 Pages: 3995 - 4005
Effect of band non-parabolicity on energy sub-band profile for nano-dimensional MOSFET
Mainak Mukherjee
Manash Chanda
Anup Dey
Technical Paper 01 February 2020 Pages: 4007 - 4014
Multicore implementation and performance analysis of a chaos based LSB steganography technique
Gaurav Gambhir
Jyotsna Kumar Mandal
Technical Paper 12 February 2020 Pages: 4015 - 4025
Silicon photovoltaic cell based on graphene oxide as an active layer
Pramila Mahala
Navneet Gupta
Sumitra Singh
Technical Paper 02 March 2020 Pages: 4027 - 4033
Cap-layer and charge sheet effect in InP based pnp δ-doped heterojunction bipolar transistor
M. R. Jena
A. K. Panda
G. N. Dash
Technical Paper 03 February 2020 Pages: 4035 - 4040
Effect of fringing field capacitances in RF and small signal parameters of surrounding gate MOSFET
Ruben Ray
Rahul Das
Manash Chanda
Technical Paper 13 February 2020 Pages: 4041 - 4049
Saliency detection via outlier pursuit in compress domain (SDOPCD)
Sujit Das
Jyotsna Kumar Mandal
Technical Paper 15 February 2020 Pages: 4051 - 4057
A 10 nm MOS and its applications
Jyotsna Kumar Mandal
Raktim Chakraborty
Technical Paper 19 February 2020 Pages: 4059 - 4064
Extraction of admittance parameters of symmetrically doped AlGaN/GaN/AlGaN DH-HEMT for microwave frequency applications
Nisha Chugh
Manoj Kumar
R. S. Gupta
Technical Paper 17 March 2020 Pages: 4065 - 4072
Investigation of electrical/analog performance and reliability of gate metal and source pocket engineered DG-TFET
Jaya Madan
Rahul Pandey
Rishu Chaujar
Technical Paper 18 April 2020 Pages: 4073 - 4085
Favorable influence of ssDNA-functionalized SWCNT on the navigation pattern of C. elegans
Swati Sinha
Siddharth Shaw
Jaya Bandyopadhyay
Technical Paper 12 June 2020 Pages: 4087 - 4100
Noise analysis of double gate composite InAs based HEMTs for high frequency applications
R. Poornachandran
N. Mohan Kumar
S. Baskaran
Technical Paper 22 July 2020 Pages: 4101 - 4109
Design and performance study on a new biaxial micro-accelerometer with variable cross-section beam
Jianghong Sun
Jialin Wang
Junjian Wang
Technical Paper 08 January 2021 Pages: 4111 - 4120
Development of three-dimensional wafer level chip scale packaging using via last TSV and UV laser releasable temporary bonding technologies
Chengqian Wang
Meng Zhang
Daquan Yu
OriginalPaper 29 June 2021 Pages: 4121 - 4125

Volume 27, Issue 11

Preface

Foreword: special issue on more than more microsystems

Characterization and analysis of low-noise GaN-HEMT based inverter circuits

Effect of high-K dielectric on differential conductance and transconductance of ID-DG MOSFET following Ortiz-Conde model

Performance analysis of gas sensing device and corresponding IoT framework in mines

Junctionless double gate non-parabolic variable barrier height Si-MOSFET for energy efficient application

Drain current modelling of unipolar junction dual material double-gate MOSFET (UJDMDG) for SoC applications

Effect of band non-parabolicity on energy sub-band profile for nano-dimensional MOSFET

Multicore implementation and performance analysis of a chaos based LSB steganography technique

Silicon photovoltaic cell based on graphene oxide as an active layer

Cap-layer and charge sheet effect in InP based pnp δ-doped heterojunction bipolar transistor

Effect of fringing field capacitances in RF and small signal parameters of surrounding gate MOSFET

Saliency detection via outlier pursuit in compress domain (SDOPCD)

A 10 nm MOS and its applications

Extraction of admittance parameters of symmetrically doped AlGaN/GaN/AlGaN DH-HEMT for microwave frequency applications

Investigation of electrical/analog performance and reliability of gate metal and source pocket engineered DG-TFET

Favorable influence of ssDNA-functionalized SWCNT on the navigation pattern of C. elegans

Noise analysis of double gate composite InAs based HEMTs for high frequency applications

Design and performance study on a new biaxial micro-accelerometer with variable cross-section beam

Development of three-dimensional wafer level chip scale packaging using via last TSV and UV laser releasable temporary bonding technologies

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