Volume 592, Issue 1 | MRS Online Proceedings Library

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Volume 592, Issue 1

December 1999

Symposium T — Structure & Electronic Properties of Ultrathin Dielectric Films…

Issue Editors:

H.J. von Bardeleben,
D.A. Buchanan,
A.H. Edwards,
T. Hattori

54 articles in this issue

Precise characterization of ultrathin nitride/oxide gate dielectrics by grazing x-ray reflectance and spectroscopic ellipsometry
Pierre Boher
Jean Philippe Piel
Jean Louis Stehle
OriginalPaper 01 April 2000 Pages: 1 - 6
Evaluation of the Degradation Dynamics of Thin Silicon Dioxide Films using Model-Independent Procedures
R. Rodríguez
M. Nafría
X. Aymerich
OriginalPaper 01 April 2000 Pages: 7 - 12
Room Temperature Ultraviolet Photoluminescence from 800°C Thermally Oxidized Si,_1-x-yGe_xC_y Thin Films on Si(100) Substrate
X. M. Cheng
Y. D. Zheng
R. L. Jiang
OriginalPaper 01 April 2000 Pages: 13 - 17
Theoretical and Experimental Investigation of Ultrathin Oxynitrides
A. A. Demkov
R. Liu
OriginalPaper 01 April 2000 Pages: 18 - 23
Multi-Million Atom Molecular-Dynamics Simulations of Stresses in Si(111)/Si₃N₄ Nanopixels
Martina E. Bachlechner
Andrey Omeltchenko
Anupam Madhukar
OriginalPaper 01 April 2000 Pages: 24 - 29
Dynamics of Silicon Oxidation
A. M. Stoneham
M. A. Szymanski
A. L. Shluger
OriginalPaper 01 April 2000 Pages: 30 - 41
Microscopic and Theoretical Investigations of the Si-SiO₂ Interface
G. Duscher
R. Buzcko
M. Rühle
OriginalPaper 01 April 2000 Pages: 42 - 47
Characterization of the P_b1 Interface Defect in Thermal (100)Si/SiO₂ by Electron Spin Resonance: ²⁹Si Hyperfine Structure and Electrical Relevance
A. L. Stesmans
OriginalPaper 01 April 2000 Pages: 48 - 59
Detection of Interfaces States Correlated with Layer-By-Layer Oxidation on Si(100)
T. Hattori
H. Nohira
N. Watanabe
OriginalPaper 01 April 2000 Pages: 60 - 64
Defect States Due to Silicon Dangling Bonds at the Si(100)/SiO₂ Interface and the Passivation by Hydrogen Atoms
C. Kaneta
T. Yamasaki
K. Terakura
OriginalPaper 01 April 2000 Pages: 65 - 70
Surface and Interfacial Topography of Oxides on Si(111) with Ultra-Low Atomic Step Density
Antonio C. Oliver
Jack M. Blakely
OriginalPaper 01 April 2000 Pages: 71 - 76
XPS Studies of the Si/SiO₂ Interface with Synchrotron Radiation
F. Rochet
F. Jolly
A. Taleb-Ibrahimj
OriginalPaper 01 April 2000 Pages: 77 - 88
Influence of pre and post process conditions on the composition of thin Si₃N₄ thin Alms (3 nm) studied by XPS and TOFSIMS
T. Conard
H. De Witte
C. Werkhoven
OriginalPaper 01 April 2000 Pages: 89 - 94
Deposition and Characterization of Ultra-Thin Ta₂O₅ Layers Deposited on Silicon from A Ta(OC₂H₅)₅ Precursor
C. Chanelere
J. L. Autran
A. Kaktmoto
OriginalPaper 01 April 2000 Pages: 95 - 100
Highly Reliable Thin Hafnium Oxide Gate Dielectric
Laegu Kang
Byoung-Hun Lee
Jack C. Lee
OriginalPaper 01 April 2000 Pages: 101 - 106
Band Alignments of High-K Dielectrics on Si and Pt
J. Robertson
E. Rjassi
A. I. Kingon
OriginalPaper 01 April 2000 Pages: 107 - 112
Mesoscopic Transport in Broken down Ultrathin SiO₂ Films
E. Miranda
J. Sune
X. Aymerich
OriginalPaper 01 April 2000 Pages: 113 - 118
Roles of Primary Hot Hole and FN Electron Fluences in Gate Oxide Breakdown
M. F. Li
Y. D. He
K. F. Lo
OriginalPaper 01 April 2000 Pages: 119 - 124
A Study of Quasi-Breakdown Mechanism in Ultrathin Gate Oxide Under Various Types of Stress
Hao Guan
Zhen Xu
Y. D. He
OriginalPaper 01 April 2000 Pages: 125 - 130
Investigation of Quasi-Breakdown Mechanism in Ultra-Thin Gate Oxides
Hao Guan
Y. D. He
Zhong Dong
OriginalPaper 01 April 2000 Pages: 131 - 136
Correlation between Gate Induced Drain Leakage and Plasma Induced Interface Traps
Siguang Ma
Yaohui Zhang
George T. T. Sheng
OriginalPaper 01 April 2000 Pages: 137 - 142
Effects of Reverse Biased Floating Voltage at Source and Drain During High-Field Electron Injection on the Performance of Nmosfets
R. K. Jarwal
D. Misra
OriginalPaper 01 April 2000 Pages: 143 - 148
Characterization of Ta₂O₅ Thin Films with Small Current Leakage for High Density Drams
N. Kanda
R. Furukawa
Y. Ohji
OriginalPaper 01 April 2000 Pages: 149 - 154
Dielectric Properties of Bi₂Ti₂O₇ Thin Films with (111) Orientation
Zhuo Wang
J. Huang
Yuguo Wang
OriginalPaper 01 April 2000 Pages: 155 - 160
Ultra Thin No/N₂0 Oxynitride Dielectric for Advanced Flash Memory Application: Single Wafer and Batch Technology
R. Zonca
B. Crivelli
S. Nesso
OriginalPaper 01 April 2000 Pages: 161 - 166
Chemical and Structural Characterization of Ultrathin Dielectric Films using AEM
J. H. J. Scott
E. S. Windsor
OriginalPaper 01 April 2000 Pages: 167 - 172
Analysis of MOS Device Capacitance-Voltage Characteristics based on the Self-Consistent Solution of the Schrodinger and Poisson Equations
C. Raynaud
J. L. Autran
A. Poncet
OriginalPaper 01 April 2000 Pages: 173 - 178
An XPS Study of Silicon Oxynitride Rapid Thermally Grown in Nitric Oxide
W. H. Lai
M. F. Li
T. C. Chua
OriginalPaper 01 April 2000 Pages: 179 - 184
Improved Performance and Reliability in Aggressively-Scaled Nmos and Pmos Fets: I) Monolayer Interface Nitridation and II) Replacement of Stacked Oxide/Nitride Dielectrics with Optimized Oxide/Oxynitride Stacks
Hanyang Yang
Hiro Niimi
Gerry Lucovsky
OriginalPaper 01 April 2000 Pages: 185 - 190
Structure Analysis of CeO₂/ZrO₂/Si Multilayer Thin Films by Hrtem
Takanori Kiguchi
Naoki Wakiya
Nobuyasu Mizutani
OriginalPaper 01 April 2000 Pages: 191 - 196
Controlling the concentration and position of nitrogen in ultrathin oxynitride films formed by using oxygen and nitrogen radicals
K. Watanabe
M. Togo
T. Tatsumi
OriginalPaper 01 April 2000 Pages: 197 - 202
Correlation Between Development of Leakage Current and Hydrogen Ionization in Ultrathin Silicon Dioxide Layers
V. V. Afanas’ev
A. Stesmans
OriginalPaper 01 April 2000 Pages: 203 - 208
From Radiation Induced Leakage Current to Soft Breakdown in Irradiated MOS Devices with Ultra-Thin Gate Oxide
M. Ceschia
A. Paccagnella
J. Wyss
OriginalPaper 01 April 2000 Pages: 209 - 214
Low Temperature Direct-Oxidation of Si using Activated Oxygen Generated by Tungsten Catalytic Reaction
Manabu Kudo
Akira Izumi
Hideki Matsumura
OriginalPaper 01 April 2000 Pages: 215 - 220
Process Improvements for Reductions in Total Charge and Interface Trap Densities of Thermally-Grown Sub-3.5nm-Thick Silicon Nitrides
Sanjtt Singh Dang
Christos G. Takoudis
OriginalPaper 01 April 2000 Pages: 221 - 226
Structural, Optical and Electrical Characteristics of Silicon Carbon Nitride
L. C. Chen
C. T. Wu
C. W. Liu
OriginalPaper 01 April 2000 Pages: 227 - 233
Atomic-Scale Structure of the Si-SiO₂ and SiC-SiO₂ Interfaces and the Origin of Their Contrasting Properties
Ryszard Buczko
Stephen J. Pennycook
Sokrates T. Pantelides
OriginalPaper 01 April 2000 Pages: 234 - 239
Initial Oxynitridation of A Si(001)-2xl Surface by No
Noriyuki Miyata
Heiji Watanabe
Masakazu Ichikawa
OriginalPaper 01 April 2000 Pages: 240 - 245
Low Temperature Oxidation of Silicon(100) Substrates Using Atomic Oxygen
Τ. Ueno
S. Chikamura
Y. Iwasaki
OriginalPaper 01 April 2000 Pages: 246 - 250
Modification of Si(001)/SiO₂ Interfaces by Nitric Oxide Treatments: An Electron Paramagnetic Resonance Study
Jean-Louis Cantin
Hans Jurgen von Bardeleben
OriginalPaper 01 April 2000 Pages: 251 - 262
Paramagnetic Defects Related to Positive Charges in Silicon Oxynitride Films
Y. Miura
S. Fujieda
E. Hasegawa
OriginalPaper 01 April 2000 Pages: 263 - 268
Furnace Oxynitridation in Nitric Oxide of Thin Silicon Oxide: Atomic Transport Mechanisms and Interfacial Microstructure
I. Trimaille
J.-J. Ganem
H. J. von Bardeleben
OriginalPaper 01 April 2000 Pages: 269 - 274
Challenges in Interface Trap Characterization of Deep Sub-Micron Mos Devices using Charge Pumping Techniques
J. L. Autran
P. Masson
G. Ghibaudo
OriginalPaper 01 April 2000 Pages: 275 - 288
Photoluminescence Characterization of Defects in Thermal Oxide
Hiroyuki Nishikawa
James H. Stathis
OriginalPaper 01 April 2000 Pages: 289 - 294
Impact of temperature and breakdown statistics on reliability predictions for ultra-thin oxides
G. Groeseneken
R. Degraeve
H. E. Maes
OriginalPaper 01 April 2000 Pages: 295 - 306
Electrical and Physical Characterization of Ultrathin Silicon Oxynitride Gate Dielectric Films Formed by the Jet Vapor Deposition Technique
A. Karamcheti
V. H. C. Watt
T. P. Ma
OriginalPaper 01 April 2000 Pages: 307 - 315
Independent Tunneling Reductions Relative to Homogeneous Oxide Dielectrics from I) Nitrided Interfaces and Ii) Physically-Thicker Stacked Oxide/Nitride and Oxide/Oxynitride Gate Dielectrics
Gerry Lucovsky
Yider Wu
Hiro Niimi
OriginalPaper 01 April 2000 Pages: 316 - 321
The Boundary between Hard- and Soft-Breakdown in Ultra-Thin Silicon Dioxide Films
A. Toriumi
H. Satake
OriginalPaper 01 April 2000 Pages: 322 - 328
A Study of Trap Profiles in Thin Silicon Dioxide Films at Dielectric Breakdown using Percolation Model
S. Uno
A. Ishida
K. Taniguchi
OriginalPaper 01 April 2000 Pages: 329 - 334
Measurement Technique, Oxide Thickness and Area Dependence of Soft-Breakdown
T. Nigam
R. Degraeve
H. E. Maes
OriginalPaper 01 April 2000 Pages: 335 - 341