1. Analytic Modeling of Nonlinear Current Conduction in Access Regions of III-Nitride HEMTs

   • Kexin Li
   • Shaloo Rakheja

   OriginalPaper 05 January 2018 Pages: 131 - 136

2. AlGaN/GaN HEMTs with 2DHG Back Gate Control

   • Wei-Tse Lin
   • Wen-Chia Liao
   • Yue-ming Hsin

   OriginalPaper 26 December 2017 Pages: 137 - 141

3. AlGaN/GaN MIS-HEMTs with a p-GaN Cap Layer

   • Che-Ching Hsu
   • Pei-Chien Shen
   • Yue-Ming Hsin

   OriginalPaper 28 December 2017 Pages: 143 - 146

4. Towards Two-Dimensional Oxides for Optoelectronic Applications

   • Jonathan C. Rackham
   • Bin Zou
   • Michelle A. Moram

   OriginalPaper 20 February 2018 Pages: 147 - 151

5. Intlp compounds for Underwater Solar Energy Harvesting

   • Ahmed Zayan
   • Thomas E. Vandervelde

   OriginalPaper 11 January 2018 Pages: 153 - 158

6. Room Temperature Ferromagnetism in Gadolinium-doped Gallium Nitride

   • Vishal G. Saravade
   • Cameron H. Ferguson
   • Ian T. Ferguson

   OriginalPaper 09 January 2018 Pages: 159 - 164

7. Fabrication of Nitride Thin Films on Si Substrates by Atomic Layer Deposition Technique

   • Shumpei Ogawa
   • Tatsuya Kuroda
   • Hiroki Ishizaki

   OriginalPaper 26 February 2018 Pages: 165 - 170

8. Electrical characterization of Si-doped n-type α-Ga₂O₃ on sapphire substrates

   • Takayuki Uchida
   • Kentaro Kaneko
   • Shizuo Fujita

   OriginalPaper 11 January 2018 Pages: 171 - 177

9. Structural, Morphological, Optical and Electrical Properties of Bulk (0001) GaN:Fe Wafers

   • M. Gaddy
   • V. Kuryatkov
   • S. Nikishin

   OriginalPaper 26 February 2018 Pages: 179 - 184