Abstract
Characterization of three vendor’s bulk semi-insulating GaN:Fe wafers, grown by either hydride vapor phase epitaxy or the ammonothermal method, was performed using: scanning electron microscopy, secondary ion mass spectroscopy, high resolution X-ray diffraction, cathodoluminescence, photoluminescence, and high voltage testing. Although the Fe doping level is significantly different for each growth method, both are promising for the fabrication of PCSS devices operating in the lock-on mode.
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Gaddy, M., Kuryatkov, V., Meyers, V. et al. Structural, Morphological, Optical and Electrical Properties of Bulk (0001) GaN:Fe Wafers. MRS Advances 3, 179–184 (2018). https://doi.org/10.1557/adv.2018.234
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DOI: https://doi.org/10.1557/adv.2018.234