1. Effects of sputtering gas pressure dependence of surface morphology of ZnO films fabricated via nitrogen mediated crystallization

   • Kazuya Iwasaki
   • Koichi Matsushima
   • Naho Itagaki

   OriginalPaper 12 December 2016 Pages: 265 - 270

2. Structural and Optical Properties of Al_0.30Ga_0.70N/AlN Multiple Quantum Wells Grown on Vicinal 4H p-SiC Substrates by Molecular Beam Epitaxy

   • Gordie Brummer
   • Denis Nothern
   • T. D. Moustakas

   OriginalPaper 19 December 2016 Pages: 271 - 276

3. Blue Photoluminescence of (ZnO)_0.92(InN)_0.08

   • Koichi Matsushima
   • Kazuya Iwasaki
   • Naho Itagaki

   OriginalPaper 19 December 2016 Pages: 277 - 282

4. Optical Properties of Germanium Doped Cubic GaN

   • Donat J. As
   • Michael Deppe
   • Dirk Reuter

   OriginalPaper 20 December 2016 Pages: 283 - 288

5. Hot Filament CVD epitaxy of 3C-SiC on 6H and 3C-SiC substrates

   • Philip Hens
   • Ryan Brow
   • Bart Van Zeghbroeck

   OriginalPaper 12 January 2017 Pages: 289 - 294

6. Development of a New Electrochemical Method for Preparation of Titanium Dioxides Films from an Aqueous Solution

   • Hiroki Ishizaki
   • Yuta Yokokawa
   • Akira Yamamoto

   OriginalPaper 24 January 2017 Pages: 295 - 300

7. Corundum-Structured α-In₂O₃ as a Wide-Bandgap Semiconductor for Electrical Devices

   • Kentaro Kaneko
   • Masashi Kitajima
   • Shizuo Fujita

   OriginalPaper 24 January 2017 Pages: 301 - 307

8. Hydrogen passivation of vacancies in diamond: Electronic structure and stability from ab initio calculations

   • Kamil Czelej
   • Piotr Śpiewak

   OriginalPaper 24 January 2017 Pages: 309 - 314

9. Pulsed Laser Deposition of Epitaxial ZnS_xSe_1-x Thin Films for Waveguiding Applications in Mid-IR Active Multilayered Structures

   • Zachary R. Lindsey
   • Matthew W. Rhoades
   • Renato P. Camata

   OriginalPaper 08 February 2017 Pages: 315 - 321

10. Temperature-dependent Optical Properties of AlN Thin Films by Spectroscopy Ellipsometry

    • Yao Liu
    • Ehsan Ghafari
    • Na Lu

    OriginalPaper 13 February 2017 Pages: 323 - 328

11. Epitaxial Growth of InAlN/GaN Heterostructures on Silicon Substrates in a Single Wafer Rotating Disk MOCVD Reactor

    • Jing Lu
    • Jie Su
    • Ajit Paranjpe

    OriginalPaper 13 February 2017 Pages: 329 - 334