A new energy model for the calculation of the surface reconstruction of III–V semiconductors: Application to the GaAs (110) surface S. E. ToetD. Lenstra OriginalPaper Pages: 85 - 89
Comment on “Amorphous hydrogenated silicon studied by positron lifetime spectroscopy” S. DannefaerP. MascherD. Kerr OriginalPaper Pages: 91 - 92
Conductivity fluctuations in planar resistors G. De MeyG. VerhenneJ. Landuyt OriginalPaper Pages: 93 - 95
Reflectivity and transmittance investigations of photoexcited charge carriers in silicon in the picosecond time domain H. BergnerV. BrücknerM. Supianek OriginalPaper Pages: 97 - 104
Electron ionization rate in III–V ternary semiconductors S. R. SinghB. B. Pal OriginalPaper Pages: 105 - 109
Equivalent resonance radius of contoured AT-cut quartz resonators S. H. Slavov OriginalPaper Pages: 111 - 116
EL2 deep level in sub-bandgap surface photovoltage spectra in GaAs bulk crystals K. GermanovaCh. Hardalov OriginalPaper Pages: 117 - 121
Effect of visible light intensity on the dielectric behaviour of mercuric iodide M. M. Abdul-GaderK. A. WishahR. N. Ahmad-Bitar OriginalPaper Pages: 123 - 130
Crystal-orientation dependence of photoconductivity in Pb2CrO5 thin film K. TodaS. MoritaK. Takahashi OriginalPaper Pages: 131 - 137
Determination oc carrier density dependent lifetime and quantum efficiency in semiconductors with a photoluminescence method (application to InGaAsP/InP heterostructures) J. PietzschT. Kamiya Erratum Pages: 142 - 142
Surface free energy of laser-produced bond percolators M. ThuillardM. von Allmen OriginalPaper Pages: 143 - 146
Investigation of partial sputtering of lithium from a binary Al/Li alloy with laser induced fluorescence R. P. SchornH. L. BayB. Schweer OriginalPaper Pages: 147 - 151