Abstract
Experimentally observed surface-photovoltage-method (SPV) spectra in the subbandgap energy range are presented for a real (100)GaAs surface, treated with preepitaxial procedures. Conductive, n-type GaAs and semi-insulating GaAs are studied. It is shown that SPV spectra are formed as a result of the simultaneous action of both surface states and deep bulk levels. The spectral shape of the surface-state photoionization cross-section is qualitatively determined. The influence of the deep bulk levels on the SPV spectra is explained, and the photoionization cross-section for both Cr and EL2 levels is qualitatively determined.
Similar content being viewed by others
References
W. Mönch, P. Koke, S. Krueger: J. Vac. Sci. Technol.19, 313 (1981)
K. Heilig, H. Flietner, J. Reineke: J. Phys. D12, 927 (1979)
C. Raisin, E. Vieujot-Testemale, A. Ben Brahim, J.M. Palau, L. Lassabatere: Solid State Electron.27, 413 (1984)
J. Lagowski, C. Balestra, H. Gatos: Surf. Sci.29, 213 (1972)
L. Lassabatere, C. Alibert, J. Bonnet, L. Soonckindt: J. Phys. E9, 775 (1976)
A. Goodman: Proc. Intl. El. Dev. Meeting (Washington, Dec. 1980) pp. 231–234
W. Mönch, H. Clemens, S. Görlich, R. Enninghorst, H. Gant: J. Vac. Sci. Technol.19, 525 (1981)
J. Bonnet, J.M. Palau, E. Testemale, L. Soonckindt, L. Lassabatere: Proc. 4th Int'l. Conf. on Solid Surfaces and ECOSS-3 (Cannes, 1980) pp. 1129–1132
K. Germanova, L. Konstantinov, V. Strashilov: Surf. Sci.128, 447 (1983)
L. Szaro: Surf. Sci.137, 311 (1984)
A. Chantre, G. Vincent, D. Bois: Phys. Rev. B23, 5335 (1981)
A. Milnes: Adv. Electron. Electron Phys.61, 63 (1983) and references therein
K. Germanova, Ch. Hardalov, V. Strashilov, B. Georgiev: J. Phys. E19 (1986)
W. Spicer, P. Chye, P. Skeath, C. Su, I. Lindau: J. Vac. Sci. Technol.16, 1422 (1979)
W. Spicer, I. Lindau, P. Skeath, C. Su: J. Vac. Sci. Technol.17, 1017 (1980)
W. Spicer, S. Eglash, I. Lindau, C. Su, P. Skeath: Thin Solid Films89, 447 (1982)
W. Mönch: Surf. Sci.132, 92 (1983)
R. Grant, J. Waldrop, S. Kowalczyk, E. Kraut: J. Vac. Sci. Technol.19, 477 (1981)
J. Lagowski, C. Balestra, H. Gatos: Surf. Sci.27, 547 (1971)
J. Lagowski, C. Balestra, H. Gatos: Surf. Sci.29, 213 (1972)
N. Tsukada, T. Kikuta, K. Ishida: Jap. J. Appl. Phys.24, L302 (1985); Jap. J. Appl. Phys.25, L196 (1986)
H. Clemens, W. Mönch: CRC Crit. Rev. Solid State Sci.5, 273 (1975)
M. Borisov, K. Germanova, Ch. Hardalov, T. Tosheva: Appl. Phys. A40, 219 (1986)
B. Clerjaud, A. Hennel, G. Martinez: Solid State Commun.33, 933 (1980)
A. Hennel, W. Szuszkiewicz, M. Balkanski, G. Martinez: Phys. Rev. B23, 3933 (1981)
M. Kaminska, M. Skowronski, J. Lagowski, J. Parsey, H. Gatos: Appl. Phys. Lett.43, 302 (1983)
J. Lagowski, M. Skowronski, H. Gatos: Jap. J. Appl. Phys.25, L194 (1986)
M. Kaminska, M. Skowronski, W. Kuszko: Phys. Rev. Lett.55, 2204 (1985)
G. Martin, J. Farges, G. Jacob, J. Hallais, G. Poibland: J. Appl. Phys.51, 2840 (1980)