Defect characterization at the growth interface in GaAs epitaxy by metallorganic and chloride depositions A. MitonneauJ. P. ChanéJ. P. André OriginalPaper Pages: 213 - 229
Solid-state anion migration in the anodic oxidation of lutetium diphthalocyanine F. A. PizzarelloM. M. Nicholson OriginalPaper Pages: 231 - 239
Lattice constant, bandgap, thickness, and surface morphology of InGaAsP-InP layers grown by step-cooling, equilibrium-cooling, supercooling and two-phase-solution growth techniques M. FengL. W. CookG. E. Stillman OriginalPaper Pages: 241 - 280
The organometallic VPE growth of GaAs1−ySby using trimethylantimony and Ga1−xInxAs using trimethylarsenic C. B. CooperM. J. LudowiseR. L. Moon OriginalPaper Pages: 299 - 309
Assessment of defects in as-grown III-V multilayer structures by differentiated cathodoluminescence topography (DCLT) J. BakkerJ. de PoorterW. T. Stacy OriginalPaper Pages: 311 - 334
Deep-level defects and diffusion length measurements in low energy proton-irradiated GaAs Sheng S. LiW. L. WangS. G. Kamath OriginalPaper Pages: 335 - 354
Formation of heavily doped n-type layers in GaAs by multiple ion implantation E. B. StonehamG. A. PattersonJ. M. Gladstone OriginalPaper Pages: 371 - 383
Some electrical and optical properties of a-Si:F:H alloys A. MadanS. R. OvshinskyM. Shur OriginalPaper Pages: 385 - 409
Chemical control of conductivity in a molecularly-doped polymer J. MortS. GrammaticaA. Troup OriginalPaper Pages: 411 - 418
Capacitance transient spectra of processing- and radiation-induced defects in silicon solar cells J. T. SchottH. M. DeAngelisP. J. Drevinsky OriginalPaper Pages: 419 - 434
Epitaxial solar cells on titanium-doped silicon substrates R. V. D’AielloP. H. RobinsonD. Richman OriginalPaper Pages: 435 - 444
The preparation of Ga-rich GaxIn1−xSb alloy crystals K. J. BachmannF. A. ThielJ. J. Rubin OriginalPaper Pages: 445 - 452
Laser formation of Pt-Si Schottky barriers on silicon C. J. DohertyC. A. CriderG. K. Celler OriginalPaper Pages: 453 - 458
Electron effective mass in InuGa1−uPvAs1−v for 0 ≤ v ≤ 1 Ernesto H. PereaEmilio MendezClifton G. Fonstad OriginalPaper Pages: 459 - 466
