Abstract
The liquidus curves in the Cu-Sb-S system near CuSbS2 composition and between CuSbS2 and Sb2S3 were determined by cooling arrests of seeded melts. CuSbS2 melts congruently at 552.25 ± 0.14°C and a eutectic occurs between CuSbS2 and Sb2S3 at 490 ± 5°C and 0.72 ± 0.05 mole fraction Sb2S3. No additional phases appear on the liquidus surface in this portion of the Cu-Sb-S system. Crystals of CuSbS2 were grown from the stoichiometric composition using the Bridgman Stockbarger method. At room temperature, the band gap of CuSbS2 is 0.28 eV; however below 80K, a drop in resistivity suggests the appearance of a new phase. Measurements of photo current suggest that the band gap of the low temperature phase is greater than 0.58 eV.
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Wachtel, A., Noreika, A. Growth and characterization of CuSbS2 crystals. J. Electron. Mater. 9, 281–297 (1980). https://doi.org/10.1007/BF02670850
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DOI: https://doi.org/10.1007/BF02670850