Effect of oxygen injection during vpe growth of GaAs Films L. PalmH. BruchP. Balk OriginalPaper Pages: 555 - 570
Control of Hole Concentration in Liquid-Phase Epitaxial Layers of PbTe by As Doping M. G. AstlesC. PickeringM. L. Young OriginalPaper Pages: 603 - 617
Preparation of photoluminescent and conductive ZnSe:I Crystals by iodine vapor transport R. Poindessault OriginalPaper Pages: 619 - 633
Photoluminescence in polycrystalline GaAs AT 5K P. B. PerryA. E. Blakeslee OriginalPaper Pages: 635 - 640
The formation of silicides in Mo-W Bilayer films on si substrates: A marker experiment J. BaglinJ. DempseyC. Serrano OriginalPaper Pages: 641 - 661
Preparation and properties of bulk Gax In1-x As Crystals Y. T. LeuF. A. ThielK. J. Bachmann OriginalPaper Pages: 663 - 674
Properties of Rapidly-Grown rtr silicon sheet and their effects on solar cell processing R. LeggeA. BaghdadiB. Sopori OriginalPaper Pages: 675 - 688
Electrical properties of substitutionally doped cvd amorphous silicon M. TaniguchiY. OsakaM. Hirose OriginalPaper Pages: 689 - 700