Some properties of chemically vapor deposited films of AlxOyNz on silicon E. A. IreneV. J. SilvestriG. R. Woolhouse OriginalPaper Pages: 409 - 427
Chemical vapor deposition of AlxOyNz films V. J. SilvestriE. A. IreneJ. D. Kuptsis OriginalPaper Pages: 429 - 444
The gold-silicon phase diagram R. P. AnantatmulaA. A. JohnsonR. J. Horylev OriginalPaper Pages: 445 - 463
Vacuum deposited epitaxial layers of PbSl−xSex for laser devices G. F. McLaneK. J. Sleger OriginalPaper Pages: 465 - 479
Infrared optical properties of GaAs after N+ ion implantation F. EulerJ. J. ComerC. A. Bergeron OriginalPaper Pages: 481 - 495
Effects of Mg additions on the electromigration behavior of Al thin film conductors F. M. d’HeurleA. GanguleeV. A. Ranieri OriginalPaper Pages: 497 - 515
Preparation and physical properties of lanthanum-modified Srl-xBaxNb2O6, ferroelectric crystals R. B. MaciolekS. T. Liu OriginalPaper Pages: 517 - 526
Temperature dependence of carrier ionization rates and saturated velocities in silicon D. R. DeckerC. N. Dunn OriginalPaper Pages: 527 - 547
Formation of lithium niobate-tantalate waveguides W. PhillipsJ. M. Hammer OriginalPaper Pages: 549 - 565
Analysis of room-temperature luminescence spectra of VPE-grown nitrogen-doped gallium phosphide P. F. LindquistT. L. Larsen OriginalPaper Pages: 567 - 590
Charge transfer properties of mnos structures as influenced by processing parameters S. Zirinsky OriginalPaper Pages: 591 - 624
Growth of CdTel−x Sex by the LEC and bridgman techniques N. KlausutisJ. A. AdamskiJ. R. Weiner OriginalPaper Pages: 625 - 634