Dynamic Recrystallization (DRX) as the Mechanism for Sn Whisker Development. Part I: A Model P. T. ViancoJ. A. Rejent OriginalPaper Open access 07 July 2009 Pages: 1815 - 1825
Dynamic Recrystallization (DRX) as the Mechanism for Sn Whisker Development. Part II: Experimental Study P. T. ViancoJ. A. Rejent OriginalPaper 07 July 2009 Pages: 1826 - 1837
Spreading Kinetics of Liquid Solders over an Intermetallic Solid Surface. Part 1: Eutectic Lead Solder H. ZhaoH. Q. WangY. Y. Qian OriginalPaper 30 June 2009 Pages: 1838 - 1845
Spreading Kinetics of Liquid Solders over an Intermetallic Solid Surface. Part 2: Lead-Free Solders H. ZhaoH. Q. WangY. Y. Qian OriginalPaper 30 June 2009 Pages: 1846 - 1854
Constitutive Relations of Indium in Extreme-Temperature Electronic Packaging Based on Anand Model Rui Wu ChangF. Patrick McCluskey OriginalPaper 13 June 2009 Pages: 1855 - 1859
Intermetallic Reaction of Indium and Silver in an Electroplating Process Pin J. WangJong S. KimChin C. Lee OriginalPaper Open access 09 June 2009 Pages: 1860 - 1865
Constitutive Relations for Creep in a SnCu-Based Composite Solder Reinforced with Ag Particles Yaowu ShiYanfu YanXiaoyan Li OriginalPaper 22 May 2009 Pages: 1866 - 1873
Monitoring the Growth of the α Phase in Tin Alloys by Electrical Resistance Measurements D. Di MaioC. P. Hunt OriginalPaper 28 April 2009 Pages: 1874 - 1880
A Novel Mechanism of Embrittlement Affecting the Impact Reliability of Tin-Based Lead-Free Solder Joints Konstantina LambrinouWout MaurissenIngrid De Wolf OriginalPaper 28 May 2009 Pages: 1881 - 1895
Fracture Mechanics of Solder Bumps During Ball Shear Testing: Effect of Bump Size Woong Ho BangChoong-Un KimKyu Hwan Oh OriginalPaper 28 May 2009 Pages: 1896 - 1905
Study of Solidification Cracks in Sn-Ag-Cu Lead-Free Solder Joints Wenxing DongYaowu ShiFu Guo OriginalPaper 22 May 2009 Pages: 1906 - 1912
Rutherford Backscattering Spectrometry Analysis of Self-Formed Ti-Rich Interface Layer Growth in Cu(Ti)/Low-k Samples Kazuyuki KohamaKazuhiro ItoMasanori Murakami OriginalPaper 28 May 2009 Pages: 1913 - 1920
Low Fatigue in Epitaxial Pb(Zr0.2Ti0.8)O3 on Si Substrates with LaNiO3 Electrodes by RF Sputtering Chun WangMark H. Kryder OriginalPaper 13 May 2009 Pages: 1921 - 1925
Amorphization and Solid-Phase Epitaxial Growth of C-Cluster Ion-Implanted Si N.G. RudawskiL.R. WhiddenK.S. Jones BriefCommunication Open access 25 June 2009 Pages: 1926 - 1930
How r-Plane Al2O3 Surface Modifications Impact the Growth of Epitaxial (001) CeO2 Thin Films Madhana SunderP. D. Moran OriginalPaper 25 June 2009 Pages: 1931 - 1937
Comparative Study on MOCVD Growth of a-Plane GaN Films on r-Plane Sapphire Substrates Using GaN, AlGaN, and AlN Buffer Layers J. N. DaiZ. H. WuC. Q. Chen OriginalPaper 11 June 2009 Pages: 1938 - 1943
Electrical Characterization of Different Passivation Treatments for Long-Wave Infrared InAs/GaSb Strained Layer Superlattice Photodiodes Koushik BanerjeeSiddhartha GhoshSanjay Krishna OriginalPaper 16 June 2009 Pages: 1944 - 1947
Interband Cascade Lasers with Wavelengths Spanning 3.2–4.2 μm C. L. CanedyJ. R. LindleJ. R. Meyer OriginalPaper 10 March 2009 Pages: 1948 - 1951
Edge-Emitting Lead Salt Mid-Infrared Laser Structure on BaF2 (110) Substrate D. LiS. MukherjeeZ. Shi OriginalPaper 21 April 2009 Pages: 1952 - 1955
p-Type PbTe Thermoelectric Bulk Materials with Nanograins Fabricated by Attrition Milling and Spark Plasma Sintering Chia-Hung KuoMing-Shan JengChii-Shyang Hwang OriginalPaper 05 February 2009 Pages: 1956 - 1961
Characterization of Zn1−x Mg x O Films Prepared by the Sol–Gel Process and Their Application for Thin-Film Transistors Chien-Yie TsayMin-Chi WangShin-Chuan Chiang OriginalPaper Open access 22 May 2009 Pages: 1962 - 1968
Preparation and Characterization of Ultrasonically Sprayed Zinc Oxide Thin Films Doped with Lithium Vildan Bilgin OriginalPaper 22 May 2009 Pages: 1969 - 1978
Silicon Nitride Films Deposited by RF Sputtering for Microstructure Fabrication in MEMS Vivekanand BhattSudhir Chandra OriginalPaper 03 June 2009 Pages: 1979 - 1989
Two Layer Surface Exfoliation on Si3N4/Si by Sequential Implantation of He and H Ions Mengkai LiZhuo WangBing Yuan OriginalPaper 31 March 2009 Pages: 1990 - 1994
Electrical Properties of Organic–Inorganic Semiconductor Device Based on Rhodamine-101 M. ÇakarÖ. GüllüA. Türüt OriginalPaper 27 May 2009 Pages: 1995 - 1999
Synthesis and Characterization of Naphthalene End-Capped Divinylbenzene for OTFT Sung Jin ParkSul Ong KimSoon-Ki Kwon OriginalPaper 12 May 2009 Pages: 2000 - 2005
Femtosecond Laser Drilling of Alumina Wafers Chengde LiSeongkuk LeeSuwas Nikumb OriginalPaper 30 April 2009 Pages: 2006 - 2012
Electrical Properties of Isotropic Conductive Adhesives Composed of Silicone-Based Elastomer Binders Containing Ag Particles Masahiro InoueHiroaki MutaKatsuaki Suganuma OriginalPaper 27 May 2009 Pages: 2013 - 2022