Self-assembled Au nanoparticle superlattice via a displacement reaction J. C. HuP. Y. SuL. J. Chen Special Issue Paper Pages: 1058 - 1063
Interface reaction between Ni and amorphous SiC Sungtae KimJ. H. PerepezkoA. S. Edelstein Special Issue Paper Pages: 1064 - 1070
Phase equilibria of the Sn-Ag-Cu-Ni quaternary system at the sn-rich corner Sinn-Wen ChenCheng-An Chang Special Issue Paper Pages: 1071 - 1079
Interfacial reaction between multicomponent lead-free solders and Ag, Cu, Ni, and Pd substrates G. Ghosh Special Issue Paper Pages: 1080 - 1091
Effects of the gold thickness of the surface finish on the interfacial reactions in flip-chip solder joints Y. L. LinW. C. LuoC. R. Kao Special Issue Paper Pages: 1092 - 1097
Microstructure and thermal expansion properties of invar-type Cu-Zn-Al shape memory alloys J. J. WangT. OmoriK. Ishida Special Issue Paper Pages: 1098 - 1102
The nanoindentation characteristics of Cu6Sn5, Cu3Sn, and Ni3Sn4 intermetallic compounds in the solder bump Guh-Yaw JangJyh-Wei LeeJeng-Gong Duh Special Issue Paper Pages: 1103 - 1110
Bromine- and chlorine-induced degradation of gold-aluminum bonds Min-Hsien LueChen-Town HuangKer-Chang Hsieh Special Issue Paper Pages: 1111 - 1117
Mechanism of interfacial reaction for the Sn-Pb solder bump with Ni/Cu under-bump metallization in flip-chip technology Guh-Yaw JangChien-Sheng HuangHideyuki Takahashi Special Issue Paper Pages: 1118 - 1129
Correlation between interfacial reactions and mechanical strengths of Sn(Cu)/Ni(P) solder bumps S. J. WangH. J. KaoC. Y. Liu Special Issue Paper Pages: 1130 - 1136
Effect of intermetallic compound formation on electrical properties of Cu/Sn interface during thermal treatment C. N. LiaoC. T. Wei Special Issue Paper Pages: 1137 - 1143
Under bump metallurgy study on copper/low-k dielectrics for fine pitch flip chip packaging Seung Wook YoonVaidyanathan KripeshMahadevan K. Iyer Special Issue Paper Pages: 1144 - 1155
Effect of partial la filling on high-temperature thermoelectric properties of IrSb3-based skutterudite compounds S. W. KimY. KimuraY. Mishima Special Issue Paper Pages: 1156 - 1160
Phase field simulations of intermetallic compound growth during soldering reactions J. Y. HuhK. K. HongK. T. Kim Special Issue Paper Pages: 1161 - 1170
Semiconductor-to-metallic phase transition of VO2 by laser excitation H. LiuO. VasquezF. E. Fernandez Special Issue Paper Pages: 1171 - 1175
Crystallization and failure behavior of Ta-Ni nanostructured/amorphous diffusion barriers for copper metallization J. S. FangT. P. HsuG. S. Chen Special Issue Paper Pages: 1176 - 1181
Interfacial reactions and shear strengths between Sn-Ag-based Pb-free solder balls and Au/EN/Cu metallization Sang-Won KimJeong-Won YoonSeung-Boo Jung Special Issue Paper Pages: 1182 - 1189
Reliability investigation and interfacial reaction of ball-grid-array packages using the lead-free Sn-Cu solder Jeong-Won YoonSang-Won KimSeung-Boo Jung Special Issue Paper Pages: 1190 - 1199
Influence of Cu addition to interface microstructure between Sn-Ag solder and Au/Ni-6P plating Chi-Won HwangKatsuaki SuganumaShigeo Hashimoto Special Issue Paper Pages: 1200 - 1209
Effects of Pd addition on Au stud bumps/Al pads interfacial reactions and bond reliability Hyoung-Joon KimJong-Soo ChoKyung-Wook Paik Special Issue Paper Pages: 1210 - 1218
Intermetallic growth studies on Sn-Ag-Cu lead-free solder joints John H. L. PangLuhua XuS. L. Ngoh Special Issue Paper Pages: 1219 - 1226
The effect of microstructural and geometrical features on the reliability of ultrafine flip chip microsolder joints Zhiheng HuangPaul P. ConwayRachel C. Thomson Regular Issue Paper Pages: 1227 - 1235
Dielectric properties of low loss Ba6−3xNd8+2xTi18O54 thin films prepared by pulsed laser deposition for microwave applications Y. D. XiaG. H. ShiZ. G. Liu Regular Issue Paper Pages: 1236 - 1239
Capacitance-voltage characterization of pulsed plasma polymerized allylamine dielectrics for flexible polymeric field effect transistors Yifan XuPaul R. BergerRichard B. Timmons Regular Issue Paper Pages: 1240 - 1247
Effects of excess Bi concentration, buffered Bi2O3 layer, and Ta doping on the orientation and ferroelectricity of chemical-solution-deposited Bi3.25La0.75Ti3O12 films Jian-Long LinTian-Lin ChangWen-Tai Lin Regular Issue Paper Pages: 1248 - 1252